IGBT - Field Stop, Trench 650 V, 40 A FGH40T65SPD-F085 Description rd Using the novel field stop 3 generation IGBT technology, FGH40T65SPDF085 offers the optimum performance with both low www.onsemi.com conduction loss and switching loss for a high efficiency operation in various applications, which provides 50 V higher blocking voltage and rugged high current switching reliability. V E V CES on CE(Sat) Meanwhile, this part also offers and advantage of outstanding 650 V 1.16 mJ 1.85 V performance in parallel operation. Features C Low Saturation Voltage: V = 1.85 V (Typ.) I = 40 A CE(Sat) C 100% Of The Part Are Dynamically Tested (Note 1) Short Circuit Ruggedness > 5 S 25C G Maximum Junction Temperature: T = 175C J Fast Switching E Tight Parameter Distribution Positive Temperature Coefficient for Easy Parallel Operating E C CoPacked With Soft And Fast Recovery Diode G AECQ101 Qualified and PPAP Capable This Device is PbFree and is RoHS Compliant COLLECTOR (FLANGE) Applications TO2473LD Onboard Charger CASE 340CK Air Conditioner Compressor PTC Heater MARKING DIAGRAM Motor Drivers Other Automotive PowerTrain Applications Y&Z&3&K FGH40T65 SPD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Data code &K = 2Digit Lot Traceability code FGH40T65SPD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2021 Rev. 3 FGH40T65SPDF085/DFGH40T65SPD F085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Units V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C Collector Current T = 100C 40 C I Pulsed Collector Current (Note 2) 120 A CM I Diode Forward Current T = 25C 40 A F C Diode Forward Current T = 100C 20 C I Pulsed Diode Maximum Forward Current (Note 2) 120 A FM P Maximum Power Dissipation T = 25C 267 W D C Maximum Power Dissipation T = 100C 134 C SCWT Short Circuit Withstand Time T = 25C 5 s C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C stg T Maximum Lead Temp. For soldering Purposes, from case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 120 A, R = 20 , Inductive Load. CC GE C G 2. Repetitive rating: pulse width limited by max. Junction temperature. THERMAL CHARACTERISTICS Symbol Rating Max. Units R Thermal Resistance Junction to Case, for IGBT 0.56 C/W JC R Thermal Resistance Junction to Case, for Diode 1.71 C/W JC R Thermal Resistance Junction to Ambient 40 C/W JA PACKING MARKING AND ORDERING INFORMATION Device Marking Device Package Pacing Type Quantity FGH40T65SPD FGH40T65SPDF085 TO2473LD Tube 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Test Conditions Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage V = 0 V, I = 1mA BV 650 V GE C CES Temperature Coefficient of Breakdown V = 0 V, I = 1mA BV / 0.6 V/ C GE C CES Voltage T J Collector Cutoff Current V = 0 V, V = V I 250 A GE CE CES CES GE Leakage Current V = V , V = 0 V I 400 nA GE GES CE GES ON CHARACTERISTICS GE Threshold Voltage V = V , I = 40 mA V 4.0 5.5 7.5 V GE CE C GE(th) Collector to Emitter Saturation Voltage V = 15 V, I = 40 A V 1.85 2.4 V GE C CE(sat) = 15 V, I = 40 A, T = 175 C 2.51 V GE C J DYNAMIC CHARACTERISTICS www.onsemi.com 2