X-On Electronics has gained recognition as a prominent supplier of FGH40T65UPD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGH40T65UPD IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGH40T65UPD ON Semiconductor

FGH40T65UPD electronic component of ON Semiconductor
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Part No.FGH40T65UPD
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: Fairchild Semiconductor IGBT Transistors 650 V 80 A 268 W
Datasheet: FGH40T65UPD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 450
Multiples : 1
450 : USD 3.8052
4500 : USD 3.6717
45000 : USD 2.8841
225000 : USD 2.4595
450000 : USD 2.4557
N/A

Obsolete
0

Multiples : 450
N/A

Obsolete
0
MOQ : 143
Multiples : 143
143 : USD 2.5203
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.65
10 : USD 4.3599
25 : USD 4.1114
100 : USD 3.5729
450 : USD 3.024
900 : USD 2.7547
2700 : USD 2.6719
N/A

Obsolete
0
MOQ : 450
Multiples : 450
450 : USD 4.5592
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
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Mxhts
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We are delighted to provide the FGH40T65UPD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGH40T65UPD and other electronic components in the IGBT Transistors category and beyond.

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IGBT - Field Stop, Trench 650 V, 40 A FGH40T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductors new series of fieldstop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature: T = 175C J G Positive Temperature Coefficient for Easy Parallel Operating High Current Capability E Low Saturation Voltage: V = 1.65 V(Typ.) I = 40 A CE(sat) C 100% of Parts Tested I (Note 2) LM E C High Input Impedance GG Tightened Parameter Distribution Short Circuit Ruggedness > 5 s 25C This Device is PbFree and is RoHS Compliant Applications TO2473LD CASE 340CK Solar Inverter, UPS, Welder, Digital Power Generator Telecom, ESS MARKING DIAGRAMS Y&Z&3&K FGH40T65 UPD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T65UPD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2020 Rev. 3 FGH40T65UPD/DFGH40T65UPD ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 25 V Collector Current T = 25C I 80 A C C Collector Current T = 100C 40 A C Pulsed Collector Current (Note 1) I 120 A CM Clamped Inductive Load Current (Note 2) T = 25C I 120 A C LM Diode Forward Current T = 25C I 40 A C F Diode Forward Current T = 100C 20 A C Pulsed Diode Maximum Forward Current (Note 1) I 120 A FM Maximum Power Dissipation T = 25C P 268 W C D Maximum Power Dissipation T = 100C 134 W C Short Circuit Withstand Time T = 25C SCWT 5 s C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. 2. Ic = 120 A, Vce = 400 V, Rg = 15 THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction to Case (IGBT) R 0.56 C/W JC Thermal Resistance, Junction to Case (Diode) R 1.71 C/W JC Thermal Resistance, Junction to Ambient 40 C/W R JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH40T65UPD FGH40T65UPD TO2473LD Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown BV / V = 0 V, I = 250 A 0.65 V/C CES GE C Voltage T J Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 40 mA, V = V 4.0 6.0 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 1.65 2.3 V CE(sat) C GE I = 40 A, V = 15 V, T = 175C 2.1 V C GE C www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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