IGBT - Field Stop 600 V, 60 A FGH60N60SF Description Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. V I CES C Features 600 V 60 A High Current Capability C Low Saturation Voltage: V = 2.3 V (Typ.) I = 60 A CE(sat) C High Input Impedance Fast Switching This Device is PbFree and is RoHS Compliant G Applications E Solar Inverter, UPS, Welder, PFC E C G COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH60N60 SF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH60N60SF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: February, 2020 Rev. 2 FGH60N60SF/DFGH60N60SF ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES Transient GatetoEmitter Voltage 30 V I Collector Current T = 25C 120 A C C T = 100C 60 A C I (Note 1) Pulsed Collector Current T = 25C 180 A CM C P Maximum Power Dissipation T = 25C 378 W D C T = 100C 151 W C T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive test: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Value Max. Unit R (IGBT) Thermal Resistance, Junction to Case 0.33 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH60N60SFTU FGH60N60SF TO247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Collector to Emitter Breakdown Voltage 600 V V = 0 V, I = 250 A CES GE C BV / T Temperature Coefficient of Breakdown Voltage V = 0 V, I = 250 A 0.4 V/C CES J GE C A I Collector CutOff Current V = V , V = 0 V 250 CES CE CES GE I GE Leakage Current V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS V GE Threshold Voltage I = 250 A, V = V 4.0 5.0 6.5 V GE(th) C CE GE V Collector to Emitter Saturation Voltage CE(sat) I = 60 A, V = 15 V, 2.3 2.9 V C GE I = 60 A, V = 15 V, C GE 2.5 V T = 125C C DYNAMIC CHARACTERISTICS V = 30 V, V = 0 V, C Input Capacitance 2820 pF CE GE ies f = 1 MHz C Output Capacitance 350 pF oes C Reverse Transfer Capacitance 140 pF res www.onsemi.com 2