IGBT - Field Stop, Trench 650 V, 60 A FGH60T65SQD-F155 Description Using novel field stop IGBT technology, ON Semiconductors new th series of field stop 4 generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. V I CES C Features 650 V 60 A Max Junction Temperature 175C Positive Temperature Coefficient for Easy Parallel Operating C High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 60 A CE(sat) C G 100% of the Parts Tested for ILM(1) High Input Impedance E Fast Switching Tighten Parameter Distribution E C This Device is PbFree and is RoHS Compliant G Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC COLLECTOR (FLANGE) TO2473LD CASE 340CH MARKING DIAGRAM Y&Z&3&K FGH60T65 SQD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH60T65SQD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2019 Rev. 3 FGH60T65SQDF155/DFGH60T65SQDF155 ABSOLUTE MAXIMUM RATINGS Symbol Description FGH60T65SQDF155 Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current TC < 25C 120 A C TC < 100C 60 I Pulsed Collector Current TC < 25C 240 A LM (Note 1) I Pulsed Collector Current 240 A CM (Note 2) I Diode Forward Current TC < 25C 60 A F Diode Forward Current TC < 100C 30 A I Repetitive Forward Surge Current 240 A FM (Note 2) P Maximum Power Dissipation TC < 25C 333 W D TC < 100C 167 W T Operating Junction Temperature Range 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. For soldering Purposes, 18 from case for 5 sec 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 240 A, R = 21 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH60T65SQDF155 Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 0.45 C/W JC R (Diode) Thermal Resistance, Junction to Case, Max. 1.25 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH60T65SQDF155 FGH60T65SQD TO2473LD Tube 30 www.onsemi.com 2