X-On Electronics has gained recognition as a prominent supplier of FGH75N60UFTU IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGH75N60UFTU IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGH75N60UFTU ON Semiconductor

FGH75N60UFTU electronic component of ON Semiconductor
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See Product Specifications
Part No.FGH75N60UFTU
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors N-CH / 600V 75A FS Planar
Datasheet: FGH75N60UFTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 7
Multiples : 7
7 : USD 4.959
15 : USD 4.7754
50 : USD 4.7754
150 : USD 4.5918
500 : USD 4.5918
N/A

Obsolete
0

Multiples : 450
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 10.1957
10 : USD 6.7004
25 : USD 6.3898
100 : USD 5.5509
450 : USD 4.826
900 : USD 4.7017
2700 : USD 4.5567
N/A

Obsolete
0
MOQ : 450
Multiples : 450
450 : USD 5.0591
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FGH75N60UFTU from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGH75N60UFTU and other electronic components in the IGBT Transistors category and beyond.

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IGBT - Field Stop 600 V, 75 A FGH75N60UF Description Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for solar inverter, UPS, www.onsemi.com welder and PFC applications where low conduction and switching losses are essential. V I CES C Features 600 V 75 A High Current Capability C Low Saturation Voltage: V = 1.9 V (Typ.) I = 75 A CE(sat) C High Input Impedance Fast Switching This Device is PbFree and is RoHS Compliant G Applications E Solar Inverters, UPS, Welder, PFC E C G COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH75N60 UF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75N60UF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: March, 2020 Rev. 2 FGH75N60UF/DFGH75N60UF ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES Transient GatetoEmitter Voltage 30 V I Collector Current T = 25C 150 A C C T = 100C 75 A C I (Note 1) Pulsed Collector Current T = 25C 225 A CM C P Maximum Power Dissipation T = 25C 452 W D C T = 100C 181 W C T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction to Case 0.276 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH75N60UFTU FGH75N60UF TO247 Tube N/A N/A 30ea www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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