IGBT - Field Stop 600 V, 80 A FGH80N60FD Description Using Novel Field Stop IGBT Technology, ON Semiconductors field stop IGBTs offer the optimum performance for induction www.onsemi.com heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features C High Current Capability Low Saturation Voltage: V = 1.8 V I = 40 A CE(sat) C High Input Impedance G Fast Switching This Device is PbFree and is RoHS Compliant E Applications Induction Heating, PFC, Telecom, ESS E C GG COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH80N60 FD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH80N60FD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: February, 2020 Rev. 3 FGH80N60FD/DFGH80N60FD ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Collector Current TC = 25C I 80 A C TC = 100C 40 A Pulsed Collector Current TC = 25C I (Note 1) 160 A CM Maximum Power Dissipation TC = 25C P 290 W D TC = 100C 116 W Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Max. Unit Thermal Resistance, JunctiontoCase R (IGBT) 0.43 C/W JC Thermal Resistance, JunctiontoCase R (Diode) 1.5 C/W JC Thermal Resistance, JunctiontoAmbient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Package Method Reel Size Tape Width Quantity FGH80N60FDTU FGH80N60FD TO247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 4.5 5.5 7.0 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 1.8 2.4 V CE(sat) C GE I = 40 A, V = 15 V, T = 125C 2.05 V C GE C DYNAMIC CHARACTERISTICS V = 30 V, V = 0 V, f = 1 MHz Input Capacitance C 2110 pF ies CE GE Output Capacitance C 200 pF oes Reverse Transfer Capacitance C 60 pF res www.onsemi.com 2