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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGL12040WD 1200 V, 40 A Field Stop Trench IGBT December 2014 FGL12040WD 1200 V, 40 A Field Stop Trench IGBT Features General Description o Maximum Junction Temperature : T = 150 C Using novel field stop IGBT technology, Fairchilds new series of J nd field stop 2 generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operating for welder applications where low conduction and switching Low Saturation Voltage: V =2.3 V I = 40 A CE(sat) C losses are essential. (1) 100% of The Parts Tested for I LM o Short Circuit Ruggedness > 5 us 150 C High Input Impedance Applications RoHS Compliant Only for Welder C G G C TO-264 E E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGL12040WD Unit V Collector to Emitter Voltage 1200 V CES Gate to Emitter Voltage 25 V V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C 80 A C I C o Collector Current T = 100 C 40 A C o 100 A I (1) Clamped Inductive Load Current T = 25 C LM C I (2) Pulsed Collector Current 100 A CM o 80 A Diode Continuous Forward Current T = 25 C C I F o 40 A Diode Continuous Forward Current T = 100 C C 100 A I (2) Diode Maximum Forward Current FM o 5 us SCWT (3) Short Circuit Withstand Time T = 150 C C o Maximum Power Dissipation T = 25 C 391 W C P D o Maximum Power Dissipation T = 100 C 156 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1. Vcc = 600 V, V = 15 V, I = 100 A, R = 23 Inductive Load GE C G 2. Repetitive rating : Pulse width limited by max, junction temperature 3. V = 600 V, V = 12 V CC GE 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGL12040WD Rev. C1