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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT September 2013 FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description Short Circuit Rated 10 us Using advanced NPT IGBT technology, Fairchilds the NPT IGBTs offer the optimum performance for low-power inverter- High Current Capability driven applications where low-losses and short-circuit rugged- High Input Impedance ness features are essential, such as sewing machine, CNC, Fast Switching motor control and home appliances. RoHS Compliant Applications Sewing Machine, CNC, Home Appliances, Motor Control C G G C E TO-220 E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current T = 25C20 A C I C o Collector Current T = 100C10 A C o I Pulsed Collector Current T = 25C30 A CM (1) C o Diode Forward Current T = 25C10 A C I F o Diode Forward Current T = 100C5 A C Maximum Power Dissipation TC = 25oC 139 W PD Maximum Power Dissipation TC = 100oC 56 W o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.9 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 3.5 C/W JC o R Thermal Resistance, Junction to Ambient (PCB Mount)(2) - 62.5 C/W JA Notes: 2: Mountde on 1 square PCB (FR4 or G-10 material) 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGP10N60UNDF Rev. C1