SGW25N120 Fast IGBT in NPT-technology C 40% lower E compared to previous generation off Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-247-3 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : SGW25N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.4 K/W thJC junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, 1200 - - V (BR)CES GE I =1500A C Collector-emitter saturation voltage V V = 15V, I =25A CE(sat) GE C T =25C 2.5 3.1 3.6 j - 3.7 4.3 T =150C j Gate-emitter threshold voltage V I =1000A, 3 4 5 GE(th) C V =V CE GE Zero gate voltage collector current I V =1200V,V =0V A CES CE GE - - 350 T =25C j - - 1400 T =150C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =25A 20 - S fs CE C Dynamic Characteristic Input capacitance C - V =25V, 2150 2600 pF iss CE Output capacitance C - V =0V, 160 190 GE oss f=1MHz Reverse transfer capacitance C - 110 130 rss Gate charge Q V =960V, I =25A - 225 300 nC Gate CC C V =15V GE Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 10s - 240 - A C(SC) GE SC 100VV 1200V, CC T 150C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 Nov. 09 Power Semiconductors