FSAM15SH60A Motion SPM 2 Series January 2014 FSAM15SH60A 2 Series Motion SPM Features General Description UL Certified No. E209204 (UL1557) FSAM15SH60A is a Motion SPM 2 module 600 V - 15 A 3-Phase IGBT Inverter with Integral providing a fully-featured, high-performance inverter Gate Drivers and Protection stage for AC Induction, BLDC, and PMSM motors. Low-Loss, Short-Circuit Rated IGBTs These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while Low Thermal Resistance Using Ceramic also providing multiple on-module protection Substrate features including under-voltage lockouts, over- Separate Open-Emitter Pins from Low Side IGBTs current shutdown, thermal monitoring, and fault for Three-Phase Current Sensing reporting. The built-in, high-speed HVIC requires Single-Grounded Power Supply only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, Optimized for 15 kHz Switching Frequency high-current drive signals required to properly drive Built-in NTC Thermistor for Temperature the module s internal IGBTs. Separate negative Monitoring IGBT terminals are available for each phase to Inverter Power Rating of 0.8 kW / 100~253 VAC support the widest variety of control algorithms. Adjustable Current Protection Level via Selection of Sense-IGBT Emitter s External Rs Isolation Rating: 2500 V / min. rms Applications Motion Control - Home Appliance / Industrial Motor Resource AN-9043 - Motion SPM 2 Series User s Guide Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSAM15SH60A FSAM15SH60A S32AA-032 Rail 8 2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSAM15SH60A Rev. C8FSAM15SH60A Motion SPM 2 Series Integrated Power Functions 600V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection and System Control Functions For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out (UVLO) Protection Note) Available bootstrap circuit example is given in Figures 13 and 14. For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out (UVLO) Protection Temperature Monitoring: system temperature monitoring using built-in thermistor Note) Available temperature monitoring circuit is given in Figure 14. Fault signaling: corresponding to a SC fault (low-side IGBTs) and UV fault (low-side control supply) Input interface: active-LOW Interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration (1(1(1))) V V V (24) V(24) V(24) V CC(CC(CC(L)L)L) THTHTH (2(2(2))) c c cooommm (L(L(L))) (25) R(25) R(25) R THTHTH (3(3(3))) I I INNN (U(U(UL)L)L) (26) N(26) N(26) N (4(4(4))) I I INNN UUU (V(V(VL)L)L) (5(5(5))) I I INNN (W(W(WLLL))) (27) N(27) N(27) N (6(6(6))) c c cooommm (L(L(L))) VVV (7(7(7))) F F FOOO (8(8(8))) C C C (28) N(28) N(28) N WWW FOFOFODDD (9(9(9))) C C C SCSCSC (1(1(10) R0) R0) R SCSCSC (29) U(29) U(29) U (((111111))) IN IN IN (UH)(UH)(UH) CCaassee T Teemmppeerratatureure ( (TT ) ) CC (1(1(12) V2) V2) V CC(UCC(UCC(UHHH))) DDeetteectctiing Poing Poinntt (1(1(13) V3) V3) V B(UB(UB(U))) (30) V(30) V(30) V (1(1(14) V4) V4) V S(US(US(U))) (((111555))) IN IN IN (V(V(VH)H)H) (1(1(16) com6) com6) com (H(H(H))) (31) W(31) W(31) W (1(1(17) V7) V7) V CC(VCC(VCC(VHHH))) (1(1(18) V8) V8) V B(VB(VB(V))) CCeerraammiicc S Suubsbstrtrateate (1(1(19) V9) V9) V S(VS(VS(V))) (((222000))) IN IN IN (32) P(32) P(32) P (W(W(WHHH))) (2(2(21) V1) V1) V CC(CC(CC(WWWHHH))) (2(2(22) V2) V2) V B(B(B(WWW))) (2(2(23) V3) V3) V S(S(S(WWW))) Figure 2. Top View 2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FSAM15SH60A Rev. C8