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X-On Electronics has gained recognition as a prominent supplier of SGH40N60UFDTU IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SGH40N60UFDTU IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SGH40N60UFDTU ON Semiconductor

SGH40N60UFDTU electronic component of ON Semiconductor
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Part No.SGH40N60UFDTU
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBTs 600V 40A TO-3P RoHS
Datasheet: SGH40N60UFDTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.1066 ea
Line Total: USD 4.11 
Availability - 33
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 4.1066
10 : USD 3.5602
30 : USD 3.2343
90 : USD 2.9065
510 : USD 2.7541
1200 : USD 2.6863

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Category
Brand Category
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SGH40N60UFDTU from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SGH40N60UFDTU and other electronic components in the IGBT Transistors category and beyond.

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SGH40N60UFD IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild s UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage : V = 2.1 V I = 20A CE(sat) C The UFD series is designed for applications such as motor High input impedance control and general inverters where high speed switching is CO-PAK, IGBT with FRD : t = 42ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. CC GG TO-3PN EE G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description SGH40N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C40 A C I C Collector Current T = 100C20 A C I Pulsed Collector Current 160 A CM (1) I Diode Continuous Forward Current T = 100C15 A F C I Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation T = 25C 160 W D C Maximum Power Dissipation T = 100C64 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.77 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.7 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1SGH40N60UFD Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage V = 0V, I = 250uA 600 -- -- V CES GE C B / Temperature Coefficient of Breakdown VCES V = 0V, I = 1mA -- 0.6 -- V/C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0V -- -- 250 uA CES CE CES GE I G-E Leakage Current V = V , V = 0V -- -- 100 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 20mA, V = V 3.5 4.5 6.5 V GE(th) C CE GE I = 20A, V = 15V -- 2.1 2.6 V Collector to Emitter C GE V CE(sat) Saturation Voltage I = 40A, V = 15V -- 2.6 -- V C GE Dynamic Characteristics C Input Capacitance -- 1430 -- pF ies V = 30V V = 0V, CE , GE C Output Capacitance -- 170 -- pF oes f = 1MHz C Reverse Transfer Capacitance -- 50 -- pF res Switching Characteristics t Turn-On Delay Time -- 15 -- ns d(on) t Rise Time -- 30 -- ns r t Turn-Off Delay Time -- 65 130 ns V = 300 V, I = 20A, d(off) CC C t Fall Time R = 10 , V = 15V, -- 50 150 ns f G GE Inductive Load, T = 25C E Turn-On Switching Loss -- 160 -- uJ C on E Turn-Off Switching Loss -- 200 -- uJ off E Total Switching Loss -- 360 600 uJ ts t Turn-On Delay Time -- 30 -- ns d(on) t Rise Time -- 37 -- ns r t Turn-Off Delay Time -- 110 200 ns V = 300 V, I = 20A, d(off) CC C t Fall Time R = 10 , V = 15V, -- 144 250 ns f G GE Inductive Load, T = 125C E Turn-On Switching Loss -- 310 -- uJ C on E Turn-Off Switching Loss -- 430 -- uJ off E Total Switching Loss -- 7401200 uJ ts Q Total Gate Charge -- 97 150 nC g V = 300 V, I = 20A, CE C Q Gate-Emitter Charge -- 20 30 nC ge V = 15V GE Q Gate-Collector Charge -- 25 40 nC gc L Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH e Electrical Characteristics of DIODE T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units T = 25C -- 1.4 1.7 C V Diode Forward Voltage I = 15A V FM F T = 100C -- 1.3 -- C T = 25C -- 42 60 C t Diode Reverse Recovery Time ns rr T = 100C -- 74 -- C T = 25C -- 4.5 6.0 Diode Peak Reverse Recovery I = 15A, C F I A rr Current di/dt = 200A/us T = 100C -- 6.5 -- C T = 25C -- 80 180 C Q Diode Reverse Recovery Charge nC rr T = 100C -- 220 -- C 2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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