SGH40N60UFD IGBT SGH40N60UFD Ultra-Fast IGBT General Description Features Fairchild s UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage : V = 2.1 V I = 20A CE(sat) C The UFD series is designed for applications such as motor High input impedance control and general inverters where high speed switching is CO-PAK, IGBT with FRD : t = 42ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. CC GG TO-3PN EE G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description SGH40N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C40 A C I C Collector Current T = 100C20 A C I Pulsed Collector Current 160 A CM (1) I Diode Continuous Forward Current T = 100C15 A F C I Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation T = 25C 160 W D C Maximum Power Dissipation T = 100C64 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.77 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.7 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1SGH40N60UFD Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage V = 0V, I = 250uA 600 -- -- V CES GE C B / Temperature Coefficient of Breakdown VCES V = 0V, I = 1mA -- 0.6 -- V/C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0V -- -- 250 uA CES CE CES GE I G-E Leakage Current V = V , V = 0V -- -- 100 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 20mA, V = V 3.5 4.5 6.5 V GE(th) C CE GE I = 20A, V = 15V -- 2.1 2.6 V Collector to Emitter C GE V CE(sat) Saturation Voltage I = 40A, V = 15V -- 2.6 -- V C GE Dynamic Characteristics C Input Capacitance -- 1430 -- pF ies V = 30V V = 0V, CE , GE C Output Capacitance -- 170 -- pF oes f = 1MHz C Reverse Transfer Capacitance -- 50 -- pF res Switching Characteristics t Turn-On Delay Time -- 15 -- ns d(on) t Rise Time -- 30 -- ns r t Turn-Off Delay Time -- 65 130 ns V = 300 V, I = 20A, d(off) CC C t Fall Time R = 10 , V = 15V, -- 50 150 ns f G GE Inductive Load, T = 25C E Turn-On Switching Loss -- 160 -- uJ C on E Turn-Off Switching Loss -- 200 -- uJ off E Total Switching Loss -- 360 600 uJ ts t Turn-On Delay Time -- 30 -- ns d(on) t Rise Time -- 37 -- ns r t Turn-Off Delay Time -- 110 200 ns V = 300 V, I = 20A, d(off) CC C t Fall Time R = 10 , V = 15V, -- 144 250 ns f G GE Inductive Load, T = 125C E Turn-On Switching Loss -- 310 -- uJ C on E Turn-Off Switching Loss -- 430 -- uJ off E Total Switching Loss -- 7401200 uJ ts Q Total Gate Charge -- 97 150 nC g V = 300 V, I = 20A, CE C Q Gate-Emitter Charge -- 20 30 nC ge V = 15V GE Q Gate-Collector Charge -- 25 40 nC gc L Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH e Electrical Characteristics of DIODE T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units T = 25C -- 1.4 1.7 C V Diode Forward Voltage I = 15A V FM F T = 100C -- 1.3 -- C T = 25C -- 42 60 C t Diode Reverse Recovery Time ns rr T = 100C -- 74 -- C T = 25C -- 4.5 6.0 Diode Peak Reverse Recovery I = 15A, C F I A rr Current di/dt = 200A/us T = 100C -- 6.5 -- C T = 25C -- 80 180 C Q Diode Reverse Recovery Charge nC rr T = 100C -- 220 -- C 2002 Fairchild Semiconductor Corporation SGH40N60UFD Rev. A1