NGB8202N, NGB8202AN Ignition IGBT 2 20 A, 400 V, NChannel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VOLTS Features V = 1.3 V CE(on) Ideal for CoilonPlug and DriveronCoil Applications I = 10 A, V 4.5 V C GE GateEmitter ESD Protection C Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection R G G Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices R GE Low Saturation Voltage High Pulsed Current Capability E These are PbFree Devices Applications 2 D PAK Ignition Systems CASE 418B STYLE 4 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) J MARKING DIAGRAM Rating Symbol Value Unit 4 CollectorEmitter Voltage V 440 V Collector CES CollectorGate Voltage V 440 V CER GB GateEmitter Voltage V 15 V GE 8202xxG Collector CurrentContinuous I 20 A C DC AYWW T = 25C Pulsed 50 A C AC Continuous Gate Current I 1.0 mA 1 3 G Gate Emitter 2 Transient Gate Current (t2 ms, f100 Hz) I 20 mA G Collector ESD (ChargedDevice Model) ESD 2.0 kV GB8202xx = Device Code ESD (Human Body Model) ESD kV xx = N or AN R = 1500 , C = 100 pF 8.0 A = Assembly Location Y = Year ESD (Machine Model) R = 0 , C = 200 pF ESD 500 V WW = Work Week Total Power Dissipation T = 25C P 150 W G = PbFree Package C D Derate above 25C 1.0 W/C ORDERING INFORMATION Operating & Storage Temperature Range T , T 55 to +175 C J stg Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NGB8202NT4G assumed, damage may occur and reliability may be affected. 2 800/Tape & Reel D PAK NGB8202ANT4G (PbFree) NGB8202ANTF4G 700/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 8 NGB8202N/DNGB8202N, NGB8202AN UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C 200 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE L G J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoCase 1.0 C/W R JC Thermal Resistance, JunctiontoAmbient (Note 1) R 62.5 C/W JA Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 2) T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 175C 370 395 420 V CES C J I = 10 mA T = 40C to 175C 390 415 440 C J Zero Gate Voltage Collector Current I V = 0 V, T = 25C 0.1 1.0 A CES GE J V = 15 V CE T = 25C 0.5 1.5 10 A J V = 200 V, CE T = 175C 1.0 25 100* J V = 0 V GE T = 40C 0.4 0.8 5.0 J Reverse CollectorEmitter Clamp B T = 25C 30 35 39 V VCES(R) J Voltage T = 175C 35 39 45* I = 75 mA J C T = 40C 30 33 37 J Reverse CollectorEmitter Leakage I T = 25C 0.05 0.1 0.5 mA CES(R) J Current V = 24 V CE T = 175C 1.0 5.0 10 J NGB8202N T = 40C 0.005 0.01 0.1 J T = 25C 0.05 0.2 1.0 J V = 24 V CE T = 175C 1.0 8.5 25 J NGB8202AN T = 40C 0.005 0.025 0.2 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 175C 12 12.5 14 V GES G J GateEmitter Leakage Current I V = 5.0 V T = 40C to 175C 200 300 350* A GES GE J Gate Resistor R T = 40C to 175C 70 G J GateEmitter Resistor R T = 40C to 175C 14.25 16 25 k GE J ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V T = 25C 1.5 1.8 2.1 V GE(th) J I = 1.0 mA, C T = 175C 0.7 1.0 1.3 J V = V GE CE T = 40C 1.7 2.0 2.3* J Threshold Temperature Coefficient 4.0 4.6 5.2 mV/C (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width 300 S, Duty Cycle 2%. www.onsemi.com 2