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This literature is subject to all applicable copyright laws and is not for resale in any manner.SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT November 2013 SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT General Description Features Fairchilds RUFD series of Insulated Gate Bipolar 50 A, 600 V, T = 100C C Transistors (IGBTs) provide low conduction and switching Low Saturation Voltage: V (sat) = 2.2 V I = 50 A CE C losses as well as short circuit ruggedness. The RUFD Typical Fall Time 261ns at T = 125C J series is designed for applications such as motor control, High Speed Switching uninterrupted power supplies (UPS) and general inverters High Input Impedance where short circuit ruggedness is a required feature. Short Circuit Rating Applications Motor Control, UPS, General Inverter. CC GG TO-264 EE G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description Ratings Unit V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C80 A C I C Collector Current T = 100C50 A C I Pulsed Collector Current 150 A CM (1) Diode Continuous Forward Current T = 25 C60 A C I F Diode Continuous Forward Current T = 100C30 A C I Diode Maximum Forward Current 90 A FM T Short Circuit Withstand Time T = 100C10 us SC C P Maximum Power Dissipation T = 25C 250 W D C Maximum Power Dissipation T = 100C 100 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction-to-Case -- 0.5 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.0 C/W JC R Thermal Resistance, Junction-to-Ambient -- 25 C/W JA 1999 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com SGL50N60RUFD Rev. C1