PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating V = 600V frequencies 8-40 kHz in hard switching, >200 CES kHz in resonant mode Generation 4 IGBT design provides tighter V = 1.65V CE(on) typ. parameter distribution and higher efficiency than G Generation 3 TM V = 15V, I = 27A GE C IGBT co-packaged with HEXFRED ultrafast, E ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard TO-247AC package Lead-Free Benefits Generation 4 IGBT s offer highest efficiencies available IGBT s optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT s . Minimized recovery characteristics require less/no snubbing Designed to be adrop-i replacement for TO-247AC equivalent industry-standard Generation 3 IR IGBT s Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 55 C C I T = 100C Continuous Collector Current 27 C C I Pulsed Collector Current 220 A CM I Clamped Inductive Load Current 220 LM I T = 100C Diode Continuous Forward Current 25 F C I Diode Maximum Forward Current 220 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 200 D C W P T = 100C Maximum Power Dissipation 78 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Junction-to-Case - IGBT ------ ------ 0.64 JC R Junction-to-Case - Diode ------ ------ 0.83 C/W JC R Case-to-Sink, flat, greased surface ------ 0.24 ------ CS R Junction-to-Ambient, typical socket mount ----- ----- 40 JA Wt Weight ------ 6 (0.21) ------ g (oz) www.irf.com 1 04/23/04IRG4PC50UDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 I = 27A V = 15V CE(on) C GE ---- 2.0 ---- V I = 55A See Fig. 2, 5 C ---- 1.6 ---- I = 27A, T = 150C C J V Gate Threshold Voltage 3.0 ---- 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 16 24 ---- S V = 100V, I = 27A fe CE C I Zero Gate Voltage Collector Current ---- ---- 250 A V = 0V, V = 600V CES GE CE ---- ---- 6500 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop ---- 1.3 1.7 V I = 25A See Fig. 13 FM C ---- 1.2 1.5 I = 25A, T = 150C C J I Gate-to-Emitter Leakage Current ---- ---- 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) ---- 180 270 I = 27A g C Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC V = 400V See Fig. 8 CC Q Gate - Collector Charge (turn-on) ---- 61 90 V = 15V gc GE t Turn-On Delay Time ---- 46 ---- T = 25C d(on) J t Rise Time ---- 25 ---- ns I = 27A, V = 480V r C CC t Turn-Off Delay Time ---- 140 230 V = 15V, R = 5.0 d(off) GE G t Fall Time ---- 74 110 Energy losses includetai and f E Turn-On Switching Loss ---- 0.99 ---- diode reverse recovery. on E Turn-Off Switching Loss ---- 0.59 ---- mJ See Fig. 9, 10, 11, 18 off E Total Switching Loss ---- 1.58 1.9 ts t Turn-On Delay Time ---- 44 ---- T = 150C, See Fig. 9, 10, 11, 18 d(on) J t Rise Time ---- 27 ---- ns I = 27A, V = 480V r C CC t Turn-Off Delay Time ---- 240 ---- V = 15V, R = 5.0 d(off) GE G t Fall Time ---- 130 ---- Energy losses includetai and f E Total Switching Loss ---- 2.3 ---- mJ diode reverse recovery. ts L Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package E C Input Capacitance ---- 4000 ---- V = 0V ies GE C Output Capacitance ---- 250 ---- pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance ---- 52 ---- = 1.0MHz res t Diode Reverse Recovery Time ---- 50 75 ns T = 25C See Fig. rr J ---- 105 160 T = 125C 14 I = 25A J F I Diode Peak Reverse Recovery Current ---- 4.5 10 A T = 25C See Fig. rr J ---- 8.0 15 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge ---- 112 375 nC T = 25C See Fig. rr J ---- 420 1200 T = 125C 16 di/dt 200A/s J di /dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/s T = 25C (rec)M J During t ---- 160 ---- T = 125C b J 2 www.irf.com