X-On Electronics has gained recognition as a prominent supplier of IRG4PC50UPBF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IRG4PC50UPBF IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IRG4PC50UPBF Infineon

Name: IRG4PC50UPBF
Brand: Infineon
SKU: IRG4PC50UPBF_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IRG4PC50UPBF electronic component of Infineon

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Part No.	IRG4PC50UPBF
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	Transistor: IGBT; 600V; 55A; 200W; TO247-3
Datasheet:	IRG4PC50UPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IRG4PC50UPBF More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 5 Multiples : 5	5 : USD 5.0805 100 : USD 4.4911	N/A Obsolete

0 Multiples : 400		N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 29.2366 30 : USD 28.1719	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 7.1318 10 : USD 4.6012 100 : USD 4.0783 250 : USD 3.9946 500 : USD 3.8587 1000 : USD 3.6809 2500 : USD 3.6809 5000 : USD 3.6391 10000 : USD 3.5345	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 6.9605 2 : USD 4.1828 7 : USD 3.9842	N/A Obsolete

0 MOQ : 13 Multiples : 1	13 : USD 3.164 25 : USD 2.9764 50 : USD 2.6787 100 : USD 2.46	N/A Obsolete

We are delighted to provide the IRG4PC50UPBF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRG4PC50UPBF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The Infineon IRG4PC50UPBF is an insulated gate bipolar transistor (IGBT) manufactured with a TO247-3 package. It is designed to provide an output of 600V with a current of 55A and a power of 200W. The IGBT is composed of two N-channel MOSFETs connected in antiparallel, with a p-channel MOSFET in between them. The device also includes a built-in fast recovery diode, which helps reduce unwanted switching disturbances. This device is ideal for applications that require high-speed switching speeds in low-power components.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 2 V 2 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 55 A 55 A
Gate-Emitter Leakage Current 100 nA 100 nA
Power Dissipation 200 W 200 W
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 200 W 200 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Continuous Collector Current Ic Max 27 A 27 A
Brand Infineon Infineon
Factory Pack Quantity : 25 25
Height 20.7 mm (Max) 20.7 mm (Max)
Length 15.87 mm (Max) 15.87 mm (Max)
Width 5.31 mm (Max) 5.31 mm (Max)
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541290000 8541290000