FGHL50T65SQ IGBT for PFC Applications 650 V, 50 A, TO-247-3L Features Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating www.onsemi.com High Current Capability Low Saturation Voltage: V =1.6 V (Typ.) I = 50 A CE(sat) C 100% of the Parts Tested for ILM (Note 1) BV V TYP I MAX CES CE(sat) C High Input Impedance 650 V 1.6 V 200 A Fast Switching Tighten Parameter Distribution C RoHS Compliant Typical Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC G MAXIMUM RATINGS (T = 25C unless otherwise noted) C E Parameter Symbol Value Unit CollectortoEmitter Voltage V 650 V CES GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage V 30 V GES Collector Current T = 25C I 100 A C C T = 100C 50 C Pulsed Collector Current (Note 2) T = 25C I 200 A TO247 LONG LEADS C CM CASE 340CX Maximum Power Dissipation T = 25C P 268 W C D T = 100C 134 C MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Maximum Lead Temperature for Soldering T 260 C L Purposes (1/8 from case for 5 s) Y&Z&3&K Stresses exceeding those listed in the Maximum Ratings table may damage the FGHL50T65 device. If any of these limits are exceeded, device functionality should not be SQ assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 200 A, Inductive Load CC GE C 2. Repetitive rating: Pulse width limited by max. Junction temperature 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3Digit Date Code &K = 2Digit Lot Traceability Code FGHL50T65SQ = Specific Device Code ORDERING INFORMATION Device Package Shipping FGHL50T65SQ TO2473L 30 Units / Rail Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2018 Rev. 0 FGHL50T65SQ/DFGHL50T65SQ Table 1. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoCase Steady State R 0.56 C/W JC JunctiontoAmbient Steady State (Note 4) R 40 JA 4. Repetitive rating: Pulse width limited by max. Junction temperature ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) C Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown V / T V = 0 V, I = 1 mA 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS Gate Threshold Voltage V V = V , I = 50 mA 2.6 4.5 6.4 V GE(th) GE CE C Collector to Emitter Saturation Voltage V I = 50 A, V = 15 V T = 25C 1.6 2.1 V CE(sat) C GE C I = 50 A, V = 15 V T = 175C 1.92 V C GE C DYNAMIC CHARACTERISTIC Input Capacitance Cies V = 30 V, V = 0 V, f = 1 MHz 3209 pF CE GE Output Capacitance Coes 42 Reverse Transfer Capacitance Cres 12 SWITCHING CHARACTERISTIC TurnOn Delay Time t V = 400 V, I = 25 A, 19 ns d(on) CC C R = 4.7 , V = 15 V, G GE Rise Time t 13 ns r Inductive Load, T = 25C C TurnOff Delay Time t 93 ns d(off) FWD: FGH50T65SQD Fall Time t 6.4 ns f TurnOn Switching Loss E 410 J on TurnOff Switching Loss E 88 J off Total Switching Loss E 498 J ts TurnOn Delay Time t V = 400 V, I = 25 A, 18 ns CC C d(on) R = 4.7 , V = 15 V, G GE Rise Time t 15 ns r Inductive Load, T = 175C C TurnOff Delay Time t 102 ns d(off) FWD: FGH50T65SQD Fall Time t 8 ns f TurnOn Switching Loss E 641 J on TurnOff Switching Loss E 203 J off Total Switching Loss E 844 J ts Total Gate Charge Q V = 400 V, I = 50 A, 99 nC g CE C V = 15 V GE GatetoEmitter Charge Q 17 nC ge GatetoCollector Charge Q 23 nC gc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2