IGBT - Field Stop 600 V, 60 A FGH60N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductors new series of Field Stop Trench IGBTs offer the optimum www.onsemi.com performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are V I CES C essential. 600 V 60 A Features Maximum Junction Temperature: T = 175C C J Positive Temperature Coefficient for easy Parallel Operating High Current Capability Low Saturation Voltage: V = 1.8 V (Typ.) I = 60 A CE(sat) C G High Input Impedance Tightened Parameter Distribution E This Device is PbFree and is RoHS Compliant E Qualified to Automotive Requirements of AECQ101 C G Applications Automotive Chargers, Converters, High Voltage Auxiliaries COLLECTOR Solar Inverters, UPS, SMPS, PFC (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH60N60 SMD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH60N60SMD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2020 Rev. 4 FGH60N60SMDF085/DFGH60N60SMD F085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES I Collector Current T = 25C 120 A C C T = 100C 60 A C I (Note 1) Pulsed Collector Current 180 A CM I Diode Forward Current T = 25C 60 A F C T = 100C 30 A C I (Note 1) Pulsed Diode Maximum Forward Current 180 A FM P Maximum Power Dissipation T = 25C 600 W D C T = 100C 300 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Max. Unit R (IGBT) Thermal Resistance, Junction to Case 0.25 C/W JC (Note 2) R (Diode) Thermal Resistance, Junction to Case 1.1 C/W JC R Thermal Resistance, Junction to Ambient (PCB Mount) (Note 2) 45 C/W JA 2. Rthjc for TO247 : according to Mil standard 8831012 test method. Rthja for TO247 : according to JESD512, test method environmental condition and JESD51 10, test boards for through hole perimeter leaded package thermal measurements. JESD51 3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Packing Method Qty per Tube FGH60N60SMD FGH60N60SMDF085 TO247 Tube 30ea www.onsemi.com 2