Preliminary Technical Information High Voltage, High Gain V = 3000V MMIX4B20N300 CES TM BIMOSFET Monolithic I = 14A C110 Bipolar MOS Transistor C2 C1 V 3.2V G1 G2 CE(sat) E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 G4 E3E4 C1 Symbol Test Conditions Maximum Ratings G1 V T = 25C to 150C 3000 V CES C E1C3 V T = 25C to 150C, R = 1M 3000 V CGR J GE G3 V Continuous 20 V GES Isolated Tab E3E4 V Transient 30 V GEM G4 E2C4 I T = 25C 34 A C25 C G2 I T = 110C 14 A C2 C110 C G3 I T = 25C, V = 19V, 1ms 150 A CM C GE E1C3 10ms 74 A G1 SSOA V = 15V, T = 125C, R = 20 I = 130 A GE VJ G CM C1 (RBSOA) Clamped Inductive Load 1500 V G = Gate E = Emitter P T = 25C 150 W C C C = Collector T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T 1.6mm (0.062 in.) from Case for 10s 300 C L z T Plastic Body for 10 seconds 260 C Silicon Chip on Direct-Copper Bond SOLD (DCB) Substrate F Mounting Force 50..200 / 11..45 Nm/lb.in. C z Isolated Mounting Surface z V 50/60Hz, 1 Minute 4000 V~ ISOL 4000V~ Electrical Isolation z High Blocking Voltage Weight 8 g z High Peak Current Capability z Low Saturation Voltage Symbol Test Conditions Characteristic Values Advantages (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Low Gate Drive Requirement BV I = 250A, V = 0V 3000 V CES C GE z High Power Density V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE I V = 0.8 V , V = 0V 35 A CES CE CES GE Note 2, T = 125C 1.5 mA Applications J I V = 0V, V = 20V 100 nA GES CE GE z Switch-Mode and Resonant-Mode V I = 20A, V = 15V, Note 1 2.7 3.2 V Power Supplies CE(sat) C GE z Capacitor Discharge Circuits T = 125C 3.2 V J 2012 IXYS CORPORATION, All Rights Reserved DS100432A(06/12) MMIX4B20N300 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 11 18 S fS C CE C 2230 pF ies C V = 25V, V = 0V, f = 1MHz 92 pF oes CE GE C 33 pF res Q 105 nC g Q I = 20A, V = 15V, V = 1000V 13 nC ge C GE CE Q 45 nC gc t 64 ns d(on) Resistive Switching Times, T = 25C J t 210 ns r I = 20A, V = 15V C GE t 300 ns d(off) V = 1250V, R = 10 CE G t 504 ns f t 68 ns d(on) Resistive Switching Times, T = 125C J t 540 ns r I = 20A, V = 15V C GE t 300 ns d(off) V = 1250V, R = 10 CE G t 395 ns f R 0.83 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V 2.1 V F F GE t I = 10A, V = 0V, -di /dt = 100A/ 1.35 s s rr F GE F I V = 100V, V = 0V 30 A RM R GE Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537