FSAM10SH60A Motion SPM 2 Series
January 2014
FSAM10SH60A
2 Series
Motion SPM
Features General Description
UL Certified No. E209204 (UL1557)
FSAM10SH60A is a Motion SPM 2 module
600 V - 10 A 3-Phase IGBT Inverter with Integral
providing a fully-featured, high-performance inverter
Gate Drivers and Protection
stage for AC Induction, BLDC, and PMSM motors.
Low-Loss, Short-Circuit Rated IGBTs These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while
Low Thermal Resistance Using Ceramic
also providing multiple on-module protection
Substrate
features including under-voltage lockouts, over-
Separate Open-Emitter Pins from Low Side IGBTs
current shutdown, thermal monitoring, and fault
for Three-Phase Current Sensing
reporting. The built-in, high-speed HVIC requires
Single-Grounded Power Supply
only a single supply voltage and translates the
incoming logic-level gate inputs to the high-voltage,
Optimized for 15 kHz Switching Frequency
high-current drive signals required to properly drive
Built-in NTC Thermistor for Temperature
the module's internal IGBTs. Separate negative
Monitoring
IGBT terminals are available for each phase to
Inverter Power Rating of 0.5 kW / 100~253 VAC
support the widest variety of control algorithms.
Adjustable Current Protection Level via Selection
of Sense-IGBT Emitter's External Rs
Isolation Rating: 2500 V / min.
rms
Applications
Motion Control - Home Appliance / Industrial Motor
Resource
AN-9043 - Motion SPM 2 Series User's Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device Device Marking Package Packing Type Quantity
FSAM10SH60A FSAM10SH60A S32AA-032 Rail 8
2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FSAM10SH60A Rev. C8FSAM10SH60A Motion SPM 2 Series
Integrated Power Functions
600V - 10 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) Protection
Note) Available bootstrap circuit example is given in Figures 13 and 14.
For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) Protection
Temperature Monitoring: system temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Figure 14.
Fault signaling: corresponding to a SC fault (low-side IGBTs) and UV fault (low-side control supply)
Input interface: active-LOW Interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
(1(1(1))) V V V
(24) V(24) V(24) V
CC(CC(CC(L)L)L)
THTHTH
(2(2(2))) c c cooommm
(L(L(L))) (25) R(25) R(25) R
THTHTH
(3(3(3))) I I INNN
(U(U(UL)L)L)
(26) N(26) N(26) N
(4(4(4))) I I INNN
UUU
(V(V(VL)L)L)
(5(5(5))) I I INNN
(W(W(WLLL)))
(27) N(27) N(27) N
(6(6(6))) c c cooommm
(L(L(L))) VVV
(7(7(7))) F F FOOO
(8(8(8))) C C C (28) N(28) N(28) N
WWW
FOFOFODDD
(9(9(9))) C C C
SCSCSC
(1(1(10) R0) R0) R
SCSCSC
(29) U(29) U(29) U
(((111111))) IN IN IN
(UH)(UH)(UH) CCaassee T Teemmppeerratatureure ( (TT ) )
CC
(1(1(12) V2) V2) V
CC(UCC(UCC(UHHH)))
DDeetteectctiing Poing Poinntt
(1(1(13) V3) V3) V
B(UB(UB(U)))
(30) V(30) V(30) V
(1(1(14) V4) V4) V
S(US(US(U)))
(((111555))) IN IN IN
(V(V(VH)H)H)
(1(1(16) com6) com6) com
(H(H(H)))
(31) W(31) W(31) W
(1(1(17) V7) V7) V
CC(VCC(VCC(VHHH)))
(1(1(18) V8) V8) V
B(VB(VB(V)))
CCeerraammiicc S Suubsbstrtrateate
(1(1(19) V9) V9) V
S(VS(VS(V)))
(((222000))) IN IN IN (32) P(32) P(32) P
(W(W(WHHH)))
(2(2(21) V1) V1) V
CC(CC(CC(WWWHHH)))
(2(2(22) V2) V2) V
B(B(B(WWW)))
(2(2(23) V3) V3) V
S(S(S(WWW)))
Figure 2. Top View
2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FSAM10SH60A Rev. C8