GA35XCP12-247
V
IGBT/SiC Diode Co-pack = 1200 V
CES
I
= 35 A
CM
V
= 3.0 V
CE(SAT)
Features Package
Optimal Punch Through (OPT) technology RoHS Compliant
SiC freewheeling diode
Positive temperature coefficient for easy paralleling
2
Extremely fast switching speeds
Temperature independent switching behavior of SiC rectifier
Best RBSOA/SCSOA capability in the industry
High junction temperature
Industry standard packaging
1
1
2
3
3
TO 247AB
Advantages Applications
Industry's highest switching speeds Solar Inverters
High temperature operation Aerospace Actuators
Improved circuit efficiency Server Power Supplies
Low switching losses Resonant Inverters > 100 kHz
Inductive Heating
Electronic Welders
Maximum Ratings, at T = 150 C, unless otherwise specified
j
Parameter Symbol Conditions Values Unit
IGBT
Collector-Emitter Voltage V 1200 V
CES
I T 105 C
DC-Collector Current 35 A
CM c
V
Gate Emitter Peak Voltage 20 V
GES
T
Operating Temperature -40 to +150 C
vj
T
Storage Temperature -40 to +150 C
stg
Free-wheeling diode
I T 105 C
DC-Forward Current 35 A
F c
I T = 25 C, t = 10 s
Non Repetitive Peak Forward Current tbd A
FM c P
I
Surge Non Repetitive Forward Current t = 10 ms, half sine, T = 25 C tbd A
F,SM P c
Thermal Characteristics
Th. Resistance Junction to Case R IGBT 0.34 K/W
thJC
R
Th. Resistance Junction to Case SiC diode 0.31 K/W
thJC
Values
Mechanical Properties
min. typ. max.
M
Mounting Torque 1.5 2 Nm
d
GA35XCP12-247
Electrical Characteristics
Values
Parameter Symbol Conditions Unit
min. typ. max.
IGBT
V V = V , I = 0.6 mA, T = 25 C
Gate Threshold Voltage 5.5 6 6.5 V
GE(th) GE CE C j
I V = 0 V, V = V , T = 25 C
0.02 0.2 mA
GE CE CES j
CES,25
Collector-Emitter Leakage Current
I V = 0 V, V = V , T = 150 C
0.3 mA
CES,150 GE CE CES j
I V = 0 V, V = 20 V, T = 25 C
Gate-Leakage Current 500 nA
GES CE GE j
T = 25C
Collector-Emitter Threshold Voltage V 1.1 V
CE(TO) j
R V = 15 V, T = 25 C
50 m
CE,25 GE j
Collector-Emitter Slope Resistance
R V = 15 V, T = 150 C
87.5 m
GE j
CE,150
V I = 35 A, V = 15 V, T = 25 C(150 C)
Collector-Emitter Saturation Voltage 3.0(3.9) V
C GE j
CE(SAT)
C
Input Capacitance tbd nF
ies
V = 0 V, V = 25 V, f = 1 MHz
C
Output Capacitance tbd nF
oes GE CE
C
Reverse Transfer Capacitance tbd nF
res
Q V = 800 V, I = 35 A, V = 15V
Gate Charge 50 nC
CC C GE
G
T=125 C, R =56 , V =1200 V, V =15 V
Reverse Bias Safe Operating Area RBSOA 45 A
j g CC GE
I T = 125 C, R = 56 ,
Short Circuit Current 60 A
sc j g
V = 900 V, V = 15 V
Short Circuit Duration t 10 s
sc CC GE
t
Rise Time 85 ns
r
t
Fall Time V = 800 V, I = 35 A, 205 ns
f CC C
t R = R = 22 ,
Turn On Delay Time 40 ns
gon goff
d(on)
V = 15 V, V = -8 V,
t
Turn Off Delay Time 232 ns
d(off) GE(0n) GE(0ff)
T= 125 C
E
Turn-On Energy Loss Per Pulse j 2.66 mJ
on
E
Turn-Off Energy Loss Per Pulse 4.35 mJ
off
Free-wheeling diode
V I = 35 A, V = 0 V, T = 25 C (150 C )
Forward Voltage 2.6(3.5) V
F F GE j
T = 25 C
Threshold Voltage at Diode V 0.8 V
D(TO) j
I
Peak Reverse Recovery Current 3.01 A
rrm
t I = 35 A, V = 0 V, V = 650 V
Reverse Recovery Time 36 ns
F GE R
rr
-dI /dt = 300 A/ s, T = 125 C
Diode peak rate of fall of reverse recovery current
F j
dI /dt
190 A/ s
rr
during tb
o o
Figure 1: Typical Output Characteristics at 25 C Figure 2: Typical Output Characteristics at 150 C
Preliminary Datasheet
January 2011 Page 2 of 5