IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ON Semiconductors new series of fieldstop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital C power generator where low conduction and switching losses are essential. Features G Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating E High Current Capability E Low Saturation Voltage: V = 1.65 V(Typ.) I = 75 A CE(sat) C C GG 100% of Parts Tested I LM High Input Impedance Tightened Parameter Distribution Short Circuit Ruggedness > 5 s 25C TO2473LD TO2473LD These Devices are PbFree and are RoHS Compliant CASE 340CK CASE 340CH FGH75T65UPD FGH75T65UPDF155 Applications Solar Inverter, UPS, Digital Power Generator MARKING DIAGRAMS Y&Z&3&K FGH75T65 UPD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65UPD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2020 Rev. 3 FGH75T65UPD/DFGH75T65UPD, FGH75T65UPD F155 ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 25 V Collector Current T = 25C I 150 A C C Collector Current T = 100C 75 A C Pulsed Collector Current (Note 1) I 225 A CM Clamped Inductive Load Current (Note 2) T = 25C I 225 A C LM Diode Forward Current T = 25C I 75 A C F Diode Forward Current T = 100C 50 A C Pulsed Diode Maximum Forward Current (Note 1) I 225 A FM Maximum Power Dissipation T = 25C P 375 W C D Maximum Power Dissipation T = 100C 187 W C Short Circuit Withstand Time T = 25C SCWT 5 s C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. 2. Ic = 225 A, Vce = 400 V, Rg = 10 THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case R (IGBT) 0.40 C/W JC Thermal Resistance, Junction to Case R (Diode) 0.86 C/W JC Thermal Resistance, Junction to Ambient 40 C/W R JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75T65UPD FGH75T65UPD TO2473 Tube N/A N/A 30 FGH75T65UPDF155 FGH75T65UPD TO2473 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.65 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE On Characteristics GE Threshold Voltage V I = 75 mA, V = V 4.0 6.0 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 75 A, V = 15 V 1.65 2.3 V CE(sat) C GE I = 75 A, V = 15 V, T = 175C 2.05 V C GE C www.onsemi.com 2