IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits www.onsemi.com Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications Rugged Transient Reliability Outstanding Parallel Operation Performance with Balance Current C Sharing Low EMI Features G AECQ101 Qualified and PPAP Capable Very Low Saturation Voltage: V = 1.6 V (Typ.) I = 160 A CE(sat) C E Maximum Junction Temperature: T = 175C J Positive Temperature CoEfficient Tight Parameter Distribution High Input Impedance 100% of the Parts are Dynamically Tested Short circuit ruggedness > 6 s 25C Copacked with Soft, Fast Recovery Extremefast Diode This Device is PbFree, Halogen Free/BFR Free and are RoHS G C E Compliant TO2473LD Applications CASE 340CU Traction Inverter for HEV/EV Auxiliary DC/AC Converter MARKING DIAGRAM Motor Drives Other PowerTrain Applications Requiring High Power Switch Y&Z&3&K FGY160T 65SPD &Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FGY160T65SPD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2019 Rev. 3 FGY160T65SPDF085/DFGY160T65SPD F085 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C (Note 1) 240 A C C Collector Current T = 100C 220 A C I Nominal Current 160 A Nominal I Pulsed Collector Current 480 A CM I Diode Forward Current T = 25C (Note 1) 240 A FM C Diode Forward Current T = 100C 188 A C P Maximum Power Dissipation T = 25C 882 W D C Maximum Power Dissipation T = 100C 441 W C SCWT Short Circuit Withstand Time T = 25C 6 s C V/ t Voltage Transient Ruggedness (Note 2) 10 V/ns T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C stg T Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited to bondwire. 2. V = 400 V, V = 15 V, I = 480 A, Inductive load. CC GE CE THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Units Thermal Resistance, Junction to Case 0.17 C/W R (IGBT) JC R (Diode) Thermal Resistance, Junction to Case 0.32 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Packing Type Qty per Tube FGY160T65SPD FGY160T65SPDF085 TP2473LD Tube 30 ea ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Collector to Emitter Breakdown Voltage V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown V = 0 V, I = 1 mA 0.6 V/C BV / CES GE C Voltage T J I Collector Cut-Off Current V = V , V = 0 V 40 A CES CE CES GE I GE Leakage Current V = V , V = 0 V 250 nA GES GE GES CE ON CHARACTERISTICS V GE Threshold Voltage I = 160 mA, V = V 4.3 5.3 6.3 V GE(th) C CE GE V Collector to Emitter Saturation Voltage I = 160 A, V = 15 V 1.6 2.05 V CE(sat) C GE I = 160 A, V = 15 V, 2.15 V C GE T = 175C J www.onsemi.com 2