IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT th Trench Field Stop 4 generation High Speed IGBT copackaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature : T = 175 J 75 A, 950 V Positive Temperature Coefficient for Easy Parallel Operating V = 1.69 V (Typ.) CESat High Current Capability C Low Saturation Voltage: V = 1.69 V (Typ.) I = 75 A CE(Sat) C Fast Switching Tighten Parameter Distribution These Devices are PbFree and are RoHS Compliant G Applications E Solar Inverter PFC DC/DC Converter MAXIMUM RATINGS Rating Symbol Value Unit 950 V V Collector to Emitter Voltage CES G TO2473LD C CASE 340CD 20 V E V Gate to Emitter Voltage GES 30 Transient Gate to Emitter Voltage MARKING DIAGRAM 150 IC A Collector Current T = 25C C 75 T = 100C C Y&Z&3&K I 300 A LM Pulsed Collector Current (Note 1) FGY75T95 SQDT I 300 A CM Pulsed Collector Current (Note 2) 150 IF A Diode Forward Current T = 25C C 75 T = 100C C I 300 A FM Pulsed Diode Forward Current (Note 2) PD 434 W Maximum Power Dissipation T = 25C C 217 T = 100C C C TJ, TSTG 55 to +175 Operating Junction Y = ON Semiconductor Logo &Z = Assembly Plant Code / Storage Temperature Range &3 = Numeric Date Code C T 300 L Maximum Lead Temp. for Soldering &K = 2Digit Lot Traceability Code FGY75T95SQDT = Specific Device Code Purposes, 1/8 from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of 1. VCC = 700 V, VGE = 15 V, IC = 300 A, RG = 26 , Inductive Load, this data sheet. 100% Tested 2. Pulse width limited by max Junction temperature. Defined by design. Not subject to production test This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2020 Rev. P1 FGY75T95SQDT/DFGY75T95SQDT ORDERING INFORMATION Part Number Top Marking Package Shipping FGY75T95SQDT FGY75T95SQDT TO2473LD 30 Units / Rail (Pb-Free) THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.35 C/W JC Thermal resistance junctiontocase, for Diode R 0.23 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, I = 1 mA BVCES 950 V GE C gateemitter shortcircuited BVCES Temperature Coefficient of Breakdown V = 0 V, I = 1 mA V/C 0.96 GE C T J Voltage Collectoremitter cutoff current, gate V = 0 V, V = 950 V ICES 250 A GE CE emitter shortcircuited Gate leakage current, collectoremitter V = 20 V , V = 0 V IGES 400 nA GE CE shortcircuited ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 75 mA VGE(th) 3.4 4.84 6.4 V GE CE C Collectoremitter saturation voltage V = 15 V, I = 75 A VCE(sat) 1.69 2.11 V GE C V = 15 V, I = 75 A, T = 175C 2.25 GE C J DYNAMIC CHARACTERISTICS Input capacitance V = 30 V, V = 0 V, f = 1 MHz Cies 4770 pF CE GE Output capacitance Coes 241 Reverse transfer capacitance Cres 19.7 Gate charge total V = 600 V, I = 75 V, V = 15 V Q 137 nC CE C GE g Gate to emitter charge Qge 33.2 Gate to collector charge Qgc 38.6 SWITCHING CHARACTERISTICS, INDUCTIVE LOAD 28.8 Turnon delay time T = 25C td(on) ns J V = 600 V, I = 37.5 A CC C 16.0 Rise time t r Rg = 4.7 V = 15 V 104.0 GE Turnoff delay time td(off) Inductive Load 30.4 Fall time t f 2.1 Turnon switching loss Eon mJ 1.0 Turnoff switching loss Eoff 3.2 Total switching loss Ets www.onsemi.com 2