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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
April 2016
FGH50T65SQD
650 V, 50 A Field Stop Trench IGBT
Features General Description
o
Maximum Junction Temperature : T =175 C Using novel field stop IGBT technology, Fairchilds new series of
J
th
field stop 4 generation IGBTs offer the optimum performance
Positive Temperaure Co-efficient for Easy Parallel Operating
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
High Current Capability
tions where low conduction and switching losses are essential.
Low Saturation Voltage: V =1.6 V(Typ.) @ I = 50 A
CE(sat) C
100% of the Parts Tested for I (1)
LM
Applications
High Input Impedance
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
C
E
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol Description FGH50T65SQD_F155 Unit
V Collector to Emitter Voltage 650 V
CES
Gate to Emitter Voltage 20 V
V
GES
Transient Gate to Emitter Voltage 30 V
o
Collector Current @ T = 25 C 100 A
C
I
C
o
Collector Current @ T = 100 C 50 A
C
o
I Pulsed Collector Current @ T = 25 C 200 A
LM (1) C
I Pulsed Collector Current 200 A
CM (2)
o
Diode Forward Current @ T = 25 C 50 A
C
I
F
o
Diode Forward Current @ T = 100 C 30 A
C
I Pulsed Diode Maximum Forward Current 200 A
FM
o
Maximum Power Dissipation @ T = 25 C 268 W
C
P
D
o
Maximum Power Dissipation @ T = 100 C 134 W
C
o
T Operating Junction Temperature -55 to +175 C
J
o
T Storage Temperature Range -55 to +175 C
stg
Maximum Lead Temp. for soldering
o
T
300 C
L
Purposes, 1/8 from case for 5 seconds
Notes:
1. V = 400 V, V = 15 V, I = 200 A, R = 3 , Inductive Load
CC GE C G
2. Repetitive rating: Pulse width limited by max. junction temperature
2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH50T65SQD Rev. 1.0