IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductors new series of Field Stop IGBTs offer the optimum performance for www.onsemi.com Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. C Features High Current Capability Low Saturation Voltage: V = 2.2 V I = 60 A CE(sat) C G High Input Impedance Fast Switching E Qualified to Automotive Requirements of AECQ101 This Device is PbFree and is RoHS Compliant E C GG Applications Automotive chargers, Converters, High Voltage Auxiliaries COLLECTOR Inverters, PFC, UPS (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH60N60 SFDTU Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH60N60SFDTU = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2020 Rev. 3 FGH60N60SFDTUF085/DFGH60N60SFDTU F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Description Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 V Collector Current T = 25C I 120 A C C T = 100C 60 A C Pulsed Collector Current T = 25C I (Note 1) 180 A C CM Maximum Power Dissipation T = 25C P 378 W C D T = 100C 151 W C Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive test, Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Unit Thermal Resistance, Junction to Case R (IGBT) 0.33 C/W JC Thermal Resistance, Junction to Case R (Diode) 1.1 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH60N60SFDTUF085 FGH60N60SFDTU TO247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.4 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 4.0 5.1 6.6 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 60 A, V = 15 V 2.2 2.9 V CE(sat) C GE I = 60 A, V = 15 V, T = 125C 2.4 V C GE C www.onsemi.com 2