IGBT - Field Stop, Trench 650 V, 50 A FGH50T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductors new series of fieldstop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature: T = 175C J G Positive Temperature Coefficient for Easy Parallel Operating High Current Capability E Low Saturation Voltage: V = 1.65 V(Typ.) I = 50 A CE(sat) C 100% of Parts Tested I (Note 2) LM E C High Input Impedance GG Tightened Parameter Distribution Short Circuit Ruggedness > 5 s 25C This Device is PbFree and is RoHS Compliant Applications TO2473LD CASE 340CK Solar Inverter, UPS, Welder, Digital Power Generator Telecom, ESS MARKING DIAGRAMS Y&Z&3&K FGH50T65 UPD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH50T65UPD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2020 Rev. 3 FGH50T65UPD/DFGH50T65UPD ABSOLUTE MAXIMUM RATINGS Description Symbol Ratings Unit Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 25 V Collector Current T = 25C I 100 A C C Collector Current T = 100C 50 A C Pulsed Collector Current (Note 1) I 150 A CM Clamped Inductive Load Current (Note 2) T = 25C I 150 A C LM Diode Forward Current T = 25C I 60 A C F Diode Forward Current T = 100C 30 A C Pulsed Diode Maximum Forward Current (Note 1) I 150 A FM Maximum Power Dissipation T = 25C P 340 W C D Maximum Power Dissipation T = 100C 170 W C Short Circuit Withstand Time T = 25C SCWT 5 s C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. 2. Ic = 150 A, Vce = 400 V, Rg = 10 THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction to Case (IGBT) R 0.44 C/W JC Thermal Resistance, Junction to Case (Diode) R 1.2 C/W JC Thermal Resistance, Junction to Ambient 40 C/W R JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH50T65UPD FGH50T65UPD TO2473LD Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown BV / V = 0 V, I = 250 A 0.65 V/C CES GE C Voltage T J Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 50 mA, V = V 4.0 6.0 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 50 A, V = 15 V 1.65 2.3 V CE(sat) C GE I = 50 A, V = 15 V, T = 175C 2.1 V C GE C www.onsemi.com 2