FGA15N20FTD 1200 V, 15 A Field Stop Trench IGBT March 2013 FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Features Field Stop Trench Technology General Description High Speed Switching Using advanced field stop trench technology, Fairchild s Low Saturation Voltage: V = 1.58 V I = 15 A CE(sat) C 1200V trench IGBTs offer superior conduction and switching High Input Impedance performances for soft switching applications. The device can RoHS Complaint operate in parallel configuration with exceptional avalanche rug- gedness. This device is designed for induction heating and Applications microwave oven. Induction Heating, Microwave Oven C G TO-3PN GEC E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 1200 V CES V Gate to Emitter Voltage 25 V GES o Collector Current T = 25 C 30 A C I C o Collector Current T = 100 C 15 A C I Pulsed Collector Current 45 A CM (1) o 15 A I Diode Continuous Forward Current T = 100 C F C 90 A I Diode Maximum Forward Current FM o Maximum Power Dissipation T = 25 C 220 W C P D o Maximum Power Dissipation T = 100 C 88 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 0.57 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 2.1 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA15N120FTD Rev. C0FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGA15N120FTD FGA15N120FTDTU TO-3PN - - 30 Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV Collector to Emitter Breakdown Voltage V = 0V, I = 1mA 1200 - - V CES GE C I Collector Cut-Off Current V = V , V = 0V - - 1 mA CES CE CES GE I G-E Leakage Current V = V , V = 0V - - 250 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 15mA, V = V 3.5 6 7.5 V GE(th) C CE GE I = 15A, V = 15V - 1.58 2 V C GE V Collector to Emitter Saturation Voltage CE(sat) I = 15A, V = 15V, C GE - 1.83 - V o T = 125 C C Dynamic Characteristics C Input Capacitance - 2350 - pF ies V = 30V V = 0V, CE , GE C Output Capacitance - 70 - pF oes f = 1MHz C Reverse Transfer Capacitance - 45 - pF res Switching Characteristics t Turn-On Delay Time - 33 - ns d(on) t Rise Time - 80 - ns r t Turn-Off Delay Time - 160 - ns d(off) V = 600V, I = 15A, CC C R = 15 , V = 15V, t Fall Time G GE - 255 330 ns f o Resistive Load, T = 25 C C E Turn-On Switching Loss - 0.3 - mJ on E Turn-Off Switching Loss - 0.58 0.74 mJ off E Total Switching Loss - 0.88 - mJ ts t Turn-On Delay Time - 30 - ns d(on) t Rise Time - 115 - ns r t Turn-Off Delay Time - 170 - ns d(off) V = 600V, I = 15A, CC C R = 15 , V = 15V, t Fall Time G GE - 390 - ns f o Resistive Load, T = 125 C C E Turn-On Switching Loss - 0.38 - mJ on E Turn-Off Switching Loss - 0.89 - mJ off E Total Switching Loss - 1.27 - mJ ts Q Total Gate Charge - 100 - nC g V = 600V, I = 15A, CE C Q Gate to Emitter Charge - 19 - nC ge V = 15V GE Q Gate to Collector Charge - 45 - nC gc 2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGA15N120FTD Rev. C0