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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA50N100BNTD 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Features Using Fairchild s proprietary trench design and advanced High Speed Switching NPT technology, the 1000V NPT IGBT offers superior Low Saturation Voltage : V = 2.5 V I = 60 A CE(sat) C conduction and switching performances, high avalanche High Input Impedance ruggedness and easy parallel operation. This device offers Built-in Fast Recovery Diode the optimum performance for hard switching application such as UPS, welder applications. Application UPS, Welder, Induction Heating, Microwave Oven CC GG TO-3P G C E EE Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description Ratings Unit V Collector-Emitter Voltage 1000 V CES V Gate-Emitter Voltage 25 V GES Collector Current T = 25C50 A C I C Collector Current T = 100C35 A C I Pulsed Collector Current 100 A CM (1) Diode Continuous Forward Current T = 25 C30 A C I F Diode Continuous Forward Current T = 100C15 A C P Maximum Power Dissipation T = 25C 156 W D C Maximum Power Dissipation T = 100C63 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering T 300 C L Purposes, 1/8 from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction-to-Case -- 0.8 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.4 C/W JC R Thermal Resistance, Junction-to-Ambient -- 25 C/W JA 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA50N100BNTD Rev. C1