FGA90N33AT 330V, 90A PDP Trench IGBT
April 2008
FGA90N33AT
tm
330V, 90A PDP Trench IGBT
Features General Description
High current capability Using Novel Trench IGBT Technology, Fairchilds new series of
trench IGBTs offer the optimum performance for PDP applica-
Low saturation voltage: V =1.1V @ I = 20A
CE(sat) C
tions where low conduction and switching losses are essential.
High input impedance
Fast switching
RoHS compliant
Applications
PDP System
C
G
TO-3P
G C
E
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V Collector to Emitter Voltage 330 V
CES
V Gate to Emitter Voltage 30 V
GES
o
I Collector Current @ T = 25 C 90 A
C C
o
I Pulsed Collector Current @ T = 25 C 220 A
C pulse(1) C
o
I Pulsed Collector Current 330 A
C pulse(2) @ T = 25 C
C
o
Maximum Power Dissipation @ T = 25 C 223 W
C
P
D
o
Maximum Power Dissipation @ T = 100 C 89 W
C
o
T Operating Junction Temperature -55 to +150 C
J
o
T Storage Temperature Range -55 to +150 C
stg
Maximum Lead Temp. for soldering
o
T
300 C
L
Purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
R (IGBT) Thermal Resistance, Junction to Case - 0.56 C/W
JC
o
R Thermal Resistance, Junction to Ambient - 40 C/W
JA
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*I pluse limited by max Tj
C
2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA90N33AT Rev. AFGA90N33AT 330V, 90A PDP Trench IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGA90N33AT FGA90N33ATTU TO-3P Tube 30ea -
Electrical Characteristics of the IGBT T = 25C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV Collector to Emitter Breakdown Voltage V = 0V, I = 250A 330 - - V
CES GE C
I Collector Cut-Off Current V = V , V = 0V - - 250 A
CES CE CES GE
I G-E Leakage Current V = V , V = 0V - - 400 nA
GES GE GES CE
On Characteristics
V G-E Threshold Voltage I = 250A, V = V 2.5 4.0 5.5 V
GE(th) C CE GE
I = 20A, V = 15V - 1.1 1.4 V
C GE
I = 45A, V = 15V,
C GE - 1.3 - V
V Collector to Emitter Saturation Voltage I = 90A, V = 15V,
CE(sat) C GE
- 1.6 - V
o
T = 25 C
C
I = 90A, V = 15V,
C GE
- 1.7 - V
o
T = 125 C
C
Dynamic Characteristics
C Input Capacitance - 2200 - pF
ies
V = 30V V = 0V,
CE , GE
C Output Capacitance - 135 - pF
oes
f = 1MHz
C Reverse Transfer Capacitance - 100 - pF
res
Switching Characteristics
t Turn-On Delay Time - 23 - ns
d(on)
V = 200V, I = 20A,
CC C
t Rise Time - 40 - ns
r
R = 5, V = 15V,
G GE
o
t Turn-Off Delay Time - 100 - ns
d(off) Resistive Load, T = 25 C
C
t Fall Time - 180 240 ns
f
t Turn-On Delay Time - 20 - ns
d(on)
V = 200V, I = 20A,
CC C
t Rise Time - 40 - ns
r
R = 5, V = 15V,
G GE
o
t Turn-Off Delay Time - 110 - ns
d(off) Resistive Load, T = 125 C
C
t Fall Time - 250 300 ns
f
Q Total Gate Charge - 95 - nC
g
V = 200V, I = 20A,
CE C
Q Gate to Emitter Charge - 12 - nC
ge
V = 15V
GE
Q Gate to Collector Charge - 40 - nC
gc
2 www.fairchildsemi.com
FGA90N33AT Rev. A