FQD2N60C / FQU2N60C N-Channel QFET MOSFET
FQD2N60C / FQU2N60C
N-Channel QFET MOSFET
600 V, 1.9 A, 4.7
Description
Features This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductors proprietary planar
1.9 A, 600 V, R = 4.7 (Max.) @ V = 10 V,
DS(on) GS
stripe and DMOS technology. This advanced MOSFET
I = 0.95 A
D
technology has been especially tailored to reduce on-state
Low Gate Charge (Typ. 8.5 nC)
resistance, and to provide superior switching performance
Low Crss (Typ. 4.3 pF)
and high avalanche energy strength. These devices are
100% Avalanche Tested
suitable for switched mode power supplies, active power
RoHSCompliant
factor correction (PFC), and electronic lamp ballasts.
D
D
G
S I-PAK
D-PAK
G
G
D
S
S
Absolute Maximum Ratings T = 25C unless otherwise noted.
C
Symbol Parameter FQD2N60CTM / FQU2N60CTU Unit
V 600 V
Drain-Source Voltage
DSS
1.9 A
Drain Current - Continuous (T = 25C)
C
I
D
- Continuous (T = 100C) 1.14 A
C
7.6 A
I Drain Current - Pulsed (Note 1)
DM
V 30 V
Gate-Source Voltage
GSS
120 mJ
E Single Pulsed Avalanche Energy (Note 2)
AS
I (Note 1) 1.9 A
Avalanche Current
AR
E 4.4 mJ
Repetitive Avalanche Energy (Note 1)
AR
4.5 V/ns
dv/dt Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (T = 25C)* 2.5 W
A
P Power Dissipation (T = 25C) 44 W
D C
0.35 W/C
- Derate above 25C
T , T -55 to +150 C
Operating and Storage Temperature Range
J STG
Maximum lead temperature for soldering purposes,
T 300 C
L
1/8 from case for 5 seconds
Thermal Characteristics
FQD2N60CTM /
Symbol Parameter Unit
FQU2N60CTU
R
Thermal Resistance, Junction-to-Case, Max. 2.87
JC
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. 110 C/W
R
JA
2
50
Thermal Resistance, Junction-to-Ambient (* 1 in pad of 2 oz copper), Max.
2003 Semiconductor Components Industries, LLC. Publication Order Number:
October-2017,Rev.2
FQU2N60C/D
FQD2N60C / FQU2N60C N-Channel QFET MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQD2N60C FQD2N60CTM D-PAK 330 mm 16 mm 2500 units
FQU2N60C FQU2N60CTU I-PAK Tube N/A 70 units
Electrical Characteristics T = 25C unless otherwise noted.
C
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BV V = 0 V, I = 250 A 600 -- -- V
Drain-Source Breakdown Voltage
DSS GS D
BV
Breakdown Voltage Temperature
DSS
I = 250 A, Referenced to 25C -- 0.6 -- V/C
D
/ T Coefficient
J
V = 600 V, V = 0 V -- -- 1 A
DS GS
I Zero Gate Voltage Drain Current
DSS
V = 480 V, T = 125C
-- -- 10 A
DS C
I V = 30 V, V = 0 V -- -- 100 nA
Gate-Body Leakage Current, Forward
GSSF GS DS
I V = -30 V, V = 0 V -- -- -100 nA
Gate-Body Leakage Current, Reverse
GSSR GS DS
On Characteristics
V V = V , I = 250 A2.0--4.0V
Gate Threshold Voltage
GS(th) DS GS D
R
Static Drain-Source
DS(on)
V = 10 V, I = 0.95 A -- 3.6 4.7
GS D
On-Resistance
g V = 40 V, I = 0.95 A -- 5.0 -- S
Forward Transconductance
FS DS D
Dynamic Characteristics
C -- 180 235 pF
Input Capacitance
iss V = 25 V, V = 0 V,
DS GS
C f = 1.0 MHz -- 20 25 pF
Output Capacitance
oss
-- 4.3 5.6 pF
C Reverse Transfer Capacitance
rss
Switching Characteristics
V = 300 V, I = 2 A,
t -- 9 28 ns
Turn-On Delay Time DD D
d(on)
R = 25
G
-- 25 60 ns
t Turn-On Rise Time
r
t -- 24 58 ns
Turn-Off Delay Time
d(off)
-- 28 66 ns
t Turn-Off Fall Time
(Note 4)
f
Q V = 480 V, I = 2 A, -- 8.5 12 nC
Total Gate Charge
g DS D
V = 10 V
GS -- 1.3 -- nC
Q Gate-Source Charge
gs
Q (Note 4) -- 4.1 -- nC
Gate-Drain Charge
gd
Drain-Source Diode Characteristics and Maximum Ratings
I -- -- 1.9 A
Maximum Continuous Drain-Source Diode Forward Current
S
I -- -- 7.6 A
Maximum Pulsed Drain-Source Diode Forward Current
SM
V V = 0 V, I = 1.9 A -- -- 1.4 V
Drain-Source Diode Forward Voltage
SD GS S
t -- 230 -- ns
Reverse Recovery Time V = 0 V, I = 2 A,
rr
GS S
dI / dt = 100 A/s
Q -- 1.0 -- C
Reverse Recovery Charge F
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 56 mH, I = 2 A, V = 50 V, R = 25 , starting T = 25C.
AS DD G J
3. I 2 A, di/dt 200 A/s, V BV starting T = 25C.
SD DD DSS, J
4. Essentially independent of operating temperature.
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