FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
QFET
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features Description
3 A, 500 V, R = 2.5 @ V = 10 V These N-Channel enhancement mode power field effect transis-
DS(on) GS
tors are produced using Fairchilds proprietary, planar stripe,
Low gate charge ( typical 10 nC )
DMOS technology.
Low Crss ( typical 8.5 pF)
This advanced technology has been especially tailored to mini-
Fast switching mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
100 % avalanche tested
commutation mode. These devices are well suited for high effi-
Improved dv/dt capability ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
{{{{ {{{{
G {{{{ {{{{
TO-220 TO-220F
G D
G S
D S
FQP Series FQPF Series {{ {{
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S
Absolute Maximum Ratings
Symbol Parameter FQP3N50C FQPF3N50C Units
V Drain-Source Voltage 500 V
DSS
I Drain Current - Continuous (T = 25C) A
D C 33 *
- Continuous (T = 100C) A
C 1.8 1.8 *
(Note 1)
I Drain Current - Pulsed A
DM 12 12 *
V Gate-Source Voltage 30 V
GSS
(Note 2)
E Single Pulsed Avalanche Energy 200 mJ
AS
(Note 1)
I Avalanche Current 3A
AR
(Note 1)
E Repetitive Avalanche Energy 6.2 mJ
AR
(Note 3)
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
P Power Dissipation (T = 25C) W
D C 62 25
- Derate above 25C W/C
0.5 0.2
T , T Operating and Storage Temperature Range -55 to +150 C
J STG
T Maximum lead temperature for soldering purposes, 300 C
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FQP3N50C FQPF3N50C Units
R Thermal Resistance, Junction-to-Case 2.0 4.9 C/W
JC
R Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W
JS
R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W
JA
2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP3N50C/FQPF3N50C Rev. AFQP3N50C/FQPF3N50C 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQP3N50C FQP3N50C TO-220 -- -- 50
FQPF3N50C FQPF3N50C TO-220F -- -- 50
Electrical Characteristics T = 25C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 A 500 -- -- V
DSS GS D
BV / Breakdown Voltage Temperature I = 250 A, Referenced to 25C -- 0.7 -- V/C
DSS D
T Coefficient
J
I Zero Gate Voltage Drain Current V = 500 V, V = 0 V -- -- 1 A
DSS DS GS
V = 400 V, T = 125C -- -- 10 A
DS C
I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA
GSSF GS DS
I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA
GSSR GS DS
On Characteristics
V Gate Threshold Voltage V = V , I = 250 A2.0--4.0 V
GS(th) DS GS D
R Static Drain-Source V = 10 V, I = 1.5 A -- 2.1 2.5
DS(on) GS D
On-Resistance
g Forward Transconductance V = 40 V, I = 1.5 A (Note 4) -- 1.5 -- S
FS DS D
Dynamic Characteristics
C Input Capacitance V = 25 V, V = 0 V, -- 280 365 pF
iss DS GS
f = 1.0 MHz
C Output Capacitance -- 50 65 pF
oss
C Reverse Transfer Capacitance -- 8.5 11 pF
rss
Switching Characteristics
t Turn-On Delay Time V = 250 V, I = 3 A, -- 10 30 ns
d(on) DD D
R = 25
G
t Turn-On Rise Time -- 25 60 ns
r
t Turn-Off Delay Time -- 35 80 ns
d(off)
(Note 4, 5)
t Turn-Off Fall Time -- 25 60 ns
f
Q Total Gate Charge V = 400 V, I = 3 A, -- 10 13 nC
g DS D
V = 10 V
GS
Q Gate-Source Charge -- 1.5 -- nC
gs
Q Gate-Drain Charge -- 5.5 -- nC
gd (Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A
S
I Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A
SM
V Drain-Source Diode Forward Voltage V = 0 V, I = 3 A -- -- 1.4 V
SD GS S
t Reverse Recovery Time V = 0 V, I = 3 A, -- 170 -- ns
rr GS S
dI / dt = 100 A/ s (Note 4)
F
-- 0.7 -- C
Q
Reverse Recovery Charge
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40mH, I = 3A, V = 50V, R = 25 , Starting T = 25C
AS DD G J
3. I 3A, di/dt 200A/ s, V BV Starting T = 25C
SD DD DSS, J
4. Pulse Test : Pulse width 300 s, Duty cycle 2%
5. Essentially independent of operating temperature
2 www.fairchildsemi.com
FQP3N50C/FQPF3N50C Rev. A