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V = 10 V, DS(on) GS I = 22.5 A produced using Fairchild Semiconductors proprietary D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 72 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 135 pF) reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D G G G D S D TO-220F TO-220 S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP45N15V2 FQPF45N15V2 Unit V Drain-Source Voltage 150 V DSS I - Continuous (T = 25C) Drain Current 45 45 * A D C - Continuous (T = 100C) 31 31 * A C I (Note 1) Drain Current - Pulsed 180 180 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1124 mJ AS I Avalanche Current (Note 1) 45 A AR E (Note 1) Repetitive Avalanche Energy 22 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 220 66 W D C - Derate above 25C 1.47 0.44 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP45N15V2 FQPF45N15V2 Unit R Thermal Resistance, Junction-to-Case, Max. 0.68 2.25 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP45N15V2 / FQPF45N15V2 Rev. C1