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V = 10 V, DS(on) GS I = 1.9 A transistors are produced using Fairchilds proprietary, D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology is especially tailored to minimize on-state Low Crss (Typ. 6.0 pF) resistance, provide superior switching performance, and 100% Avalanche Tested withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP4N20L Unit V Drain-Source Voltage 200 V DSS I Drain Current - Continuous (T = 25C) 3.8 A D C - Continuous (T = 100C) 2.4 A C I Drain Current - Pulsed (Note 1) 15.2 A DM V Gate-Source Voltage 20 V GSS E Single Pulsed Avalanche Energy (Note 2) 52 mJ AS I (Note 1) Avalanche Current 3.8 A AR E Repetitive Avalanche Energy (Note 1) 4.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 5.5 V/ns P Power Dissipation (T = 25C) 45 W D C - Derate above 25C 0.36 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQP4N20L Unit R 2.78 C/W Thermal Resistance, Junction-to-Case, Max. JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W CS R 62.5 C/W Thermal Resistance, Junction-to-Ambient, Max. JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP4N20L Rev. C0