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V = 10 V, I = 3 A DS(on) GS D produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 16 nC) stripe and DMOS technology. This advanced MOSFET Low C (Typ. 15 pF) technology has been especially tailored to reduce on-state rss resistance, and to provide superior switching performance and 100% Avalanche Tested high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP6N40CF Unit V Drain-Source Voltage 400 V DSS I Drain Current - Continuous (T = 25C) 6 A D C - Continuous (T = 100C) 3.6 A C I Drain Current - Pulsed (Note 1) 24 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 270 mJ AS I Avalanche Current (Note 1) 6 A AR E Repetitive Avalanche Energy (Note 1) 73 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 73 W D C - Derate above 25C 0.58 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum lead temperature for soldering, 1/8 from case for 5 seconds. 300 C L Thermal Characteristics Symbol Parameter FQP6N40CF Unit R Thermal Resistance, Junction-to-Case, Max. 1.71 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP6N40CF Rev. C1