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V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, planar I = 4.75 A D stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 44 nC) been especially tailored to mini-mize on-state resistance, Low Crss (Typ. 18 pF) provide superior switching perfor-mance, and withstand high 100% Avalanche Tested energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G G D G S D TO-220F TO-220 S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP10N60C FQPF10N60C Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 9.5 9.5 * A D C - Continuous (T = 100C) 5.7 5.7 * A C (Note 1) I Drain Current - Pulsed 38 38 * A DM V Gate-Source Voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 700 mJ AS (Note 1) I Avalanche Current 9.5 A AR (Note 1) E Repetitive Avalanche Energy 15.6 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 156 50 W D C - Derate above 25C 1.25 0.4 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum lead temperature for soldering, 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQPF10N60C Unit R Thermal Resistance, Junction-to-Case, Max. 0.8 2.5 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP10N60C / FQPF10N60C Rev C1