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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 1.0 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 9 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 5 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF2N70 Unit V Drain-Source Voltage 700 V DSS I - Continuous (T = 25C) Drain Current 2.0* A D C - Continuous (T = 100C) 1.3* A C I (Note 1) Drain Current - Pulsed 8.0* A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 140 mJ AS I Avalanche Current (Note 1) 2.0 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P (T = 25C) 28 W D C Power Dissipation - Derate Above 25C 0.22 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQPF2N70 Unit R Thermal Resistance, Junction-to-Case, Max. 4.46 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF2N70 Rev. C1