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V =10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 11.3 A D Low Gate Charge (Typ. 1 5 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to Low Crss (Typ. 5 0 pF) reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy strength. These devices are suitable for switched mode 175C Maximum Junction Temperature Rating power supplies, audio amplifier, DC motor control, and variable switching power applications. D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQPF30N06L Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 22.5 A D C - Continuous (T = 100C) 15.9 A C I (Note 1) Drain Current - Pulsed 90 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 350 mJ AS I Avalanche Current (Note 1) 22.5 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25C) 38 W D C - Derate above 25C 0.25 W/C T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQPF30N06L Unit R Thermal Resistance, Junction-to-Case, Max. 3.9 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF30N06L Rev. C1