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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 2.75 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 21 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 8 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D G S D TO-220 TO-220F S S Absolute Maximum Ratings T = 25C unless otherwise noted. C FQPF6N80C / Symbol Parameter FQP6N80C Unit FQPF6N80CT V Drain-Source Voltage 800 V DSS I Drain Current - Continuous (T = 25C) 5.5 5.5 * A D C - Continuous (T = 100C) 3.2 3.2 * A C I Drain Current - Pulsed (Note 1) 22 22 * A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 680 mJ AS I (Note 1) Avalanche Current 5.5 A AR E Repetitive Avalanche Energy (Note 1) 15.8 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 158 51 W D C - Derate above 25C 1.27 0.41 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds. * Drain current limited by maximum junction temperature. Thermal Characteristics FQPF6N80C / Symbol Parameter FQP6N80C Unit FQPF6N80CT R Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP6N80C / FQPF6N80C Rev. C1