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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 1.5 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 31 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 13 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, LoHS Compliant active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF5N90 Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 3.0 A D C - Continuous (T = 100C) 1.9 A C I (Note 1) Drain Current - Pulsed 12 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 660 mJ AS I Avalanche Current (Note 1) 3.0 A AR E (Note 1) Repetitive Avalanche Energy 5.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 51 W D C - Derate Above 25C 0.41 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Thermal Characteristics Symbol Parameter FQPF5N90 Unit R Thermal Resistance, Junction-to-Case, Max. 2.45 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF5N90 Rev. C1