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V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS produced using Fairchild Semiconductors proprietary I = 5.5 A D planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to Low Gate Charge (Typ. 43 nC) reduce on-state resistance, and to provide superior Low C (Typ. 20 pF) rss switching performance and high avalanche energy strength. These devices are suitable for switched mode 100% Avalanche Tested power supplies, active power factor correction (PFC), Fast Recovery Body Diode and electronic lamp ballasts. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF1 1 N50CF Unit 500 V Drain-Source Voltage V DSS I Drain Current - Continuous (T = 25C) 11* A D C - Continuous (T = 100C) A C 7* (Note 1) I Drain Current - Pulsed 44* A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 670 mJ AS (Note 1) I Avalanche Current 11 A AR (Note 1) E Repetitive Avalanche Energy 19.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 48 W D C - Derate above 25C 0.39 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF1 1 N50CF Unit R Thermal Resistance, Junction to Case, Max. 2.58 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF11N50CF Rev. C1