X-On Electronics has gained recognition as a prominent supplier of FQP3N80C MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQP3N80C MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQP3N80C ON Semiconductor

FQP3N80C electronic component of ON Semiconductor
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Part No.FQP3N80C
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 800 V 3A (Tc) 107W (Tc) Through Hole TO-220-3
Datasheet: FQP3N80C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.002 ea
Line Total: USD 2 
Availability - 669
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
669
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.002
10 : USD 1.815
100 : USD 1.408
500 : USD 1.177
1000 : USD 0.9141
2000 : USD 0.7766

   
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Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FQP3N80C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQP3N80C and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQP3N80C / FQPF3N80C N-Channel QFET MOSFET June 2014 FQP3N80C / FQPF3N80C N-Channel QFET MOSFET 800 V, 3.0 A, 4.8 Features Description 3.0 A, 800 V, R = 4.8 (Max.) V = 10 V, This N-Channel enhancement mode power MOSFET is pro- DS(on) GS I = 1.5 A duced using Fairchild Semiconductors proprietary planar stripe D and DMOS technology. This advanced MOSFET technology Low Gate Charge (Typ. 13 nC) has been especially tailored to reduce on-state resistance, and Low Crss (Typ. 5.5 pF) to provide superior switching performance and high avalanche 100% Avalanche Tested energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec- tronic lamp ballasts. D G G D G S D TO-220F TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP3N80C FQPF3N80C Unit V Drain to Source Voltage 800 V DSS o -Continuous (T = 25 C) 3 3 * A C I Drain Current D o -Continuous (T = 100 C) 1.9 1.9 * A C I Drain Current - Pulsed (Note 1) 12 12 * A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 320 mJ AS I Avalanche Current (Note 1) 3A AR E Repetitive Avalanche Energy (Note 1) 10.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 107 39 W C P Power Dissipation D o - Derate above 25 C 0.85 0.31 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FQP3N80C FQPF3N80C R Thermal Resistance, Junction to Case, Max 1.17 3.2 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP3N80C / FQPF3N80C Rev. C2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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