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V = 10 V, DS(on) GS produced using ON Semiconductors proprietary planar I = 3.15 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 12 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP8N90C FQPF8N90C Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 6.3 6.3 * A D C - Continuous (T = 100C) 3.8 3.8 * A C I (Note 1) Drain Current - Pulsed 25 25 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 850 mJ AS I Avalanche Current (Note 1) 6.3 A AR E (Note 1) Repetitive Avalanche Energy 17.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 171 60 W D C - Derate above 25C 1.37 0.48 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics S ymb ol P arameter FQP 8 N90C FQPF8N90C Unit R Thermal Resistance, Junction-to-Case, Max. 0.73 2.08 C/W JC R Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA Semiconductor Components Industries, LLC, 2016 Pub lication Order Number: December, 2016, Rev. 1.5 FQP8N90C / FQPF8N60C/D 1