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V = 10 V, I = 5 A This N-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 43 nC) planar stripe and DMOS technology. This advanced Low C (Typ. 16 pF) MOSFET technology has been especially tailored to rss reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy strength. These devices are suitable for switched mode Fast Recovery Body Diode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF10N50CF Unit 500 V Drain-Source Voltage V DSS I Drain Current - Continuous (T = 25C) 10* A D C - Continuous (T = 100C) A C 6.35* (Note 1) I Drain Current - Pulsed 40* A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 388 mJ AS (Note 1) I Avalanche Current 10 A AR (Note 1) E Repetitive Avalanche Energy 14.3 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 48 W D C - Derate above 25C 0.38 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQ PF1 0N50CF Unit R Thermal Resistance, Junction to Case, Max. 2.58 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF10N50CF Rev. C1