FQPF50N06 May 2001 TM QFET FQPF50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 60V, R = 0.022 V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D G G D S TO-220F S FQPF Series Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQPF50N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 31 A D C - Continuous (T = 100C) 21.9 A C I (Note 1) Drain Current - Pulsed 124 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 495 mJ AS I Avalanche Current (Note 1) 31 A AR E (Note 1) Repetitive Avalanche Energy 4.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P Power Dissipation (T = 25C) 47 W D C - Derate above 25C 0.31 W/C T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.22 C/W JC R Thermal Resistance, Junction-to-Ambient -- 62.5 C/W JA 2001 Fairchild Semiconductor Corporation Rev. A1. May 2001FQPF50N06 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.06 -- V/C D / T Coefficient J I V = 60 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 48 V, T = 150C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 25 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -25 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 15.5 A -- 0.018 0.022 GS D On-Resistance g Forward Transconductance V = 25 V, I = 15.5 A (Note 4) -- 19 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 1180 1540 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 440 580 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 65 90 pF rss Switching Characteristics t Turn-On Delay Time -- 15 40 ns d(on) V = 30 V, I = 25 A, DD D t Turn-On Rise Time -- 105 220 ns r R = 25 G t Turn-Off Delay Time -- 60 130 ns d(off) (Note 4, 5) t Turn-Off Fall Time -- 65 140 ns f Q Total Gate Charge -- 31 41 nC g V = 48 V, I = 50 A, DS D Q Gate-Source Charge V = 10 V -- 8 -- nC gs GS Q (Note 4, 5) Gate-Drain Charge -- 13 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 31 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 124 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 31 A -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 50 A, -- 52 -- ns rr GS S dI / dt = 100 A/ s (Note 4) Q Reverse Recovery Charge -- 75 -- nC F rr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 600 H, I = 31A, V = 25V, R = 25 , Starting T = 25C AS DD G J 3. I 50A, di/dt 300A/ s, V BV Starting T = 25C SD DD DSS, J 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature 2001 Fairchild Semiconductor Corporation Rev. A1. May 2001