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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = -4.7 A D planar stripe and DMOS technology. This advanced Low gate charge ( typ. 29 nC) MOSFET technology has been especially tailored to Low Crss ( typ. 27 pF) reduce on-state resistance, and to provide superior 100% avalanche tested switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D S TO-220 D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP9P25 Unit V Drain-Source Voltage -250 V DSS I - Continuous (T = 25C) Drain Current -9.4 A D C - Continuous (T = 100C) -5.9 A C I (Note 1) Drain Current - Pulsed -37.6 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) -9.4 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25C) 120 W D C - Derate above 25C 0.96 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQP9P25 Unit R Thermal Resistance, Junction-to-Case, Max. 1.04 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA www.fairchildsemi.com 2000 Fairchild Semiconductor Corporation 1 FQP9P25 Rev. C0