X-On Electronics has gained recognition as a prominent supplier of FGAF40S65AQ IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGAF40S65AQ IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGAF40S65AQ ON Semiconductor

FGAF40S65AQ electronic component of ON Semiconductor
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Part No.FGAF40S65AQ
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 650V 40A FS4 SA IGBT
Datasheet: FGAF40S65AQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 2.8825 ea
Line Total: USD 86.48 
Availability - 0
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 1
30 : USD 2.8825
50 : USD 2.8538
100 : USD 2.615
250 : USD 1.9837

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 2.5787
10 : USD 2.2429
30 : USD 2.0329
100 : USD 1.8174
500 : USD 1.7198
1000 : USD 1.6786

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 9.2687
10 : USD 3.3347
30 : USD 3.1586

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FGAF40S65AQ from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGAF40S65AQ and other electronic components in the IGBT Transistors category and beyond.

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Field Stop Trench IGBT 650 V, 40 A FGAF40S65AQ Description Using novel field stop IGBT technology, ON Semiconductors new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction www.onsemi.com and switching losses are essential. Features V I CES C Maximum Junction Temperature: T = 175C J 650 V 40 A Positive Temperature Coefficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 40 A CE(sat) C C 100% of the Parts Tested for I (Note 1) LM High Input Impedance G Fast Switching Tighten Parameter Distribution E IGBT with Monolithic Reverse Conducting Diode This Device is PbFree and is RoHS Compliant Applications PFC, Welder TO3PF CASE 340AH ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2021 Rev. 3 FGAF40S65AQ/DFGAF40S65AQ PACKAGE MARKING AND ORDERING INFORMATION Part Number Device Marking Package Reel Size Tape Width Quantity per Tube FGAF40S65AQ FGAF40S65AQ TO3PF 30 Table 1. ABSOLUTE MAXIMUM RATINGS Symbol Description FGAF40S65AQ Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C T = 100C 40 C I (Note 1) Pulsed Collector Current T = 25C 160 A LM C I (Note 2) Pulsed Collector Current 160 A CM I Diode Forward Current T = 25C 40 A F C T = 100C 20 A C I (Note 2) Pulsed Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation T = 25C 94 W D C T = 100C 47 W C T Operating Junction Temperature Range 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 sec 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 160 A, R = 7 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. Table 2. THERMAL CHARACTERISTICS Symbol Parameter FGAF40S65AQ Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 1.6 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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