X-On Electronics has gained recognition as a prominent supplier of FGD3040G2_F085 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGD3040G2_F085 IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGD3040G2_F085 ON Semiconductor

FGD3040G2_F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.FGD3040G2_F085
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
Datasheet: FGD3040G2_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.3224 ea
Line Total: USD 3306

Availability - 2425
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 2500
Multiples : 2500
2500 : USD 1.3224
5000 : USD 1.2784
10000 : USD 1.2514

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FGD3040G2_F085 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGD3040G2_F085 and other electronic components in the IGBT Transistors category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 FGB3040G2-F085 / FGD3040G2- F085 FGP3040G2-F085 / FGI3040G2-F085 EcoSPARK 2 300mJ, 400V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 300mJ at T = 25 C Automotive lgnition Coil Driver Circuits J Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package Symbol JEDEC TO-263AB JEDEC TO-220AB D-Pak E C G COLLECTOR G E R 1 GATE JEDEC TO-262AA JEDEC TO-252AA E D-Pak R C 2 G G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1mA) 400 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 28 V ECS C E Self Clamping Inductive Switching Energy (Note 1) 300 mJ SCIS25 E Self Clamping Inductive Switching Energy (Note 2) 170 mJ SCIS150 I Collector Current Continuous, at V = 5.0V, T = 25C 41 A C25 GE C I Collector Current Continuous, at V = 5.0V, T = 110C 25.6 A C110 GE C V Gate to Emitter Voltage Continuous 10 V GEM Power Dissipation Total, at T = 25C 150 W C P D o o Power Dissipation Derating, for T > 25C1W/ C C o T Operating Junction Temperature Range -55 to +175 C J o T Storage Junction Temperature Range -55 to +175 C STG o T Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 C L o T Reflow soldering according to JESD020C 260 C PKG HBM-Electrostatic Discharge Voltage at100pF, 1500 4kV ESD CDM-Electrostatic Discharge Voltage at 1 2kV 2014 Semiconductor Components Industries, LLC. Publication Order Number: August-2017, Rev. 3 FGB3040G2-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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