X-On Electronics has gained recognition as a prominent supplier of FGD3040G2_F085 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGD3040G2_F085 IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGD3040G2_F085 ON Semiconductor

FGD3040G2_F085 electronic component of ON Semiconductor
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Part No.FGD3040G2_F085
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
Datasheet: FGD3040G2_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 1.1057 ea
Line Total: USD 9.95 
Availability - 0
MOQ: 9  Multiples: 9
Pack Size: 9
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.5004
10 : USD 1.8745
25 : USD 1.7278
100 : USD 1.321
250 : USD 1.2751
500 : USD 1.0766
1000 : USD 0.9071
3000 : USD 0.8692

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 4.971
10 : USD 1.7916
25 : USD 1.6881
100 : USD 1.4395
500 : USD 1.1806
1000 : USD 0.9859
2500 : USD 0.9849

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 1.1912

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 2.1833

0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 9
Multiples : 9
9 : USD 1.1057
10 : USD 0.921
25 : USD 0.8471
100 : USD 0.7323
250 : USD 0.7177

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
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Continuous Collector Current at 25 C
Power Dissipation
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We are delighted to provide the FGD3040G2_F085 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGD3040G2_F085 and other electronic components in the IGBT Transistors category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 FGB3040G2-F085 / FGD3040G2- F085 FGP3040G2-F085 / FGI3040G2-F085 EcoSPARK 2 300mJ, 400V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 300mJ at T = 25 C Automotive lgnition Coil Driver Circuits J Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package Symbol JEDEC TO-263AB JEDEC TO-220AB D-Pak E C G COLLECTOR G E R 1 GATE JEDEC TO-262AA JEDEC TO-252AA E D-Pak R C 2 G G EMITTER E COLLECTOR (FLANGE) Device Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1mA) 400 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 28 V ECS C E Self Clamping Inductive Switching Energy (Note 1) 300 mJ SCIS25 E Self Clamping Inductive Switching Energy (Note 2) 170 mJ SCIS150 I Collector Current Continuous, at V = 5.0V, T = 25C 41 A C25 GE C I Collector Current Continuous, at V = 5.0V, T = 110C 25.6 A C110 GE C V Gate to Emitter Voltage Continuous 10 V GEM Power Dissipation Total, at T = 25C 150 W C P D o o Power Dissipation Derating, for T > 25C1W/ C C o T Operating Junction Temperature Range -55 to +175 C J o T Storage Junction Temperature Range -55 to +175 C STG o T Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 C L o T Reflow soldering according to JESD020C 260 C PKG HBM-Electrostatic Discharge Voltage at100pF, 1500 4kV ESD CDM-Electrostatic Discharge Voltage at 1 2kV 2014 Semiconductor Components Industries, LLC. Publication Order Number: August-2017, Rev. 3 FGB3040G2-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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