X-On Electronics has gained recognition as a prominent supplier of FGD3325G2-F085 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGD3325G2-F085 IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGD3325G2-F085 ON Semiconductor

FGD3325G2-F085 electronic component of ON Semiconductor
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Part No.FGD3325G2-F085
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: ECOSPARK 2 IGNITION IGBT
Datasheet: FGD3325G2-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.5211 ea
Line Total: USD 4.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 4.5211
10 : USD 1.8797
25 : USD 1.7327
100 : USD 1.2923
250 : USD 1.2793
500 : USD 1.0611
1000 : USD 0.8431

   
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We are delighted to provide the FGD3325G2-F085 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGD3325G2-F085 and other electronic components in the IGBT Transistors category and beyond.

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FGD3325G2-F085 EcoSPARK 2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2 -F085 EcoSPARK 2 330mJ, 250V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 330mJ at T = 25 C Automotive lgnition Coil Driver Circuits J Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak Publication Order Number: 2015 Semiconductor Components Industries, LLC. August-2017, Rev. 2 FGD3325G2-F085/D FGD3325G2-F085 EcoSPARK 2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1mA) 250 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10mA) 28 V ECS C E I = 14.8A, L = 3.0mHy, R = 1K T = 25C 330 mJ SCIS25 SCIS GE C E I = 11.4A, L = 3.0mHy, R = 1K T = 150C 195 mJ SCIS150 SCIS GE C I Collector Current Continuous, at V = 5.0V, T = 25C 41 A C25 GE C I Collector Current Continuous, at V = 5.0V, T = 110C 25 A C110 GE C V Gate to Emitter Voltage Continuous 10 V GEM Power Dissipation Total, at T = 25C T = 25C 150 W C C P D o o Power Dissipation Derating, for T > 25CT > 25C 1.0 W/ C C C o T Operating Junction Temperature Range -55 to +175 C J o T Storage Junction Temperature Range -55 to +175 C STG o T Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 C L o T Reflow soldering according to JESD020C 260 C PKG HBM-Electrostatic Discharge Voltage at100pF, 1500 4kV ESD CDM-Electrostatic Discharge Voltage at 1 2kV Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGD3325G2 FGD3325G2 -F085 TO252 330mm 16mm 2500 units Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics I = 2mA, V = 0, CE GE BV Collector to Emitter Breakdown Voltage R = 1K , 225 - 275 V CER GE o T = -40 to 150 C J I = 10mA, V = 0V, CE GE BV Collector to Emitter Breakdown Voltage R = 0, 240 - 290 V CES GE o T = -40 to 150 C J I = -75mA, V = 0V, CE GE BV Emitter to Collector Breakdown Voltage 28 - - V ECS T = 25C J BV Gate to Emitter Breakdown Voltage I = 2mA 12 14 - V GES GES o T = 25C- - 25 A V = 175V, R = 1K J CE GE I Collector to Emitter Leakage Current CER o T = 150C- - 1 mA J o T = 25 C - - 1 V = 24V, J EC I Emitter to Collector Leakage Current mA ECS o T = 150C- - 40 J R Series Gate Resistance - 120 - 1 R Gate to Emitter Resistance 10K - 30K 2 On State Characteristics o V Collector to Emitter Saturation Voltage I = 6A, V = 4V, T = 25 C - 1.15 1.25 V CE(SAT) CE GE J o V Collector to Emitter Saturation Voltage I = 10A, V = 4.5V, T = 150 C - 1.35 1.50 V CE(SAT) CE GE J o V Collector to Emitter Saturation Voltage I = 15A, V = 4.5V, T = 150 C - 1.68 1.85 V CE(SAT) CE GE J www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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