X-On Electronics has gained recognition as a prominent supplier of FGD3N60LSDTM IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGD3N60LSDTM IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGD3N60LSDTM ON Semiconductor

FGD3N60LSDTM electronic component of ON Semiconductor
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Part No.FGD3N60LSDTM
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 600V IGBT HID Application
Datasheet: FGD3N60LSDTM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.298 ea
Line Total: USD 1.3 
Availability - 1479
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 6
Multiples : 1
6 : USD 0.8719
10 : USD 0.7835
25 : USD 0.7757
100 : USD 0.7358
250 : USD 0.7328
500 : USD 0.7288
1000 : USD 0.7246

12125
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.7175

1479
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.298
10 : USD 0.9845
100 : USD 0.8591
500 : USD 0.8096
1000 : USD 0.8008
2500 : USD 0.6094

   
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We are delighted to provide the FGD3N60LSDTM from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGD3N60LSDTM and other electronic components in the IGBT Transistors category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FGD3N60LSD IGBT FGD3N60LSD IGBT Description ON Semiconductor s Insulated Gate Bipolar Transistors Features (IGBTs) provide very low conduction losses. The device is High Current Capability designed for applica-tions where very low On-Voltage Drop is a required feature. Very Low Saturation Voltage : V = 1.2 V I = 3A CE(sat) C High Input Impedance Applications HID Lamp Applications Piezo Fuel Injection Applications CC C GG D-PAK G E EE Absolute Maximum Ratings Symbol Description FGD3N60LSD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 25 V GES I Collector Current T = 25C 6 A C C Collector Current T = 100C 3 A C I Pulsed Collector Current 25 A CM (1) (1) I F Diode Continous Forward Current T = 100C 3 A C I FM Diode Maximum Forward Current 25 A P Maximum Power Dissipation T = 25C 40 W D C Derating Factor 0.32 W/C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg T Maximum Lead Temp. for Soldering 250 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 3.1 C/W JC (IGBT) R Thermal Resistance, Junction-to-Ambient (PCB Mount) -- 100 C/W JA (2) Notes : (2) Mounted on 1 squre PCB (FR4 or G-10 Material) 2006 Semiconductor Components Industries, LLC. Publication Order Number: October-2017,Rev. 2 FGD3N60LSD/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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