X-On Electronics has gained recognition as a prominent supplier of FGD4536TM IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGD4536TM IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGD4536TM ON Semiconductor

FGD4536TM electronic component of ON Semiconductor
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See Product Specifications
Part No.FGD4536TM
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 360V PDP IGBT
Datasheet: FGD4536TM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.4033
10 : USD 1.1453
100 : USD 0.8443
500 : USD 0.7461
1000 : USD 0.589
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FGD4536TM from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGD4536TM and other electronic components in the IGBT Transistors category and beyond.

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FGD4536 360 V PDP Trench IGBT September 2013 FGD4536 360 V PDP Trench IGBT Features General Description High Current Capability Using novel trench IGBT technology, Fairchilds new series of trench IGBTs offer the optimum performance for consumer Low Saturation Voltage: V = 1.59 V @ I = 50 A CE(sat) C appliances and PDP TV applications where low conduction and High Input Impedance switching losses are essential. Fast Switching RoHS Compliant Applications PDP TV, Consumer Appliances C G TO-252/D-PAK E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 360 V CES V Gate to Emitter Voltage 30 V GES o Pulsed Collector Current @ T = 25 C 220 A I C C pulse(1)* o Maximum Power Dissipation @ T = 25 C 125 W C P D o Maximum Power Dissipation @ T = 100 C 50 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case - 1.0 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1 sec * Ic_pluse limited by max Tj 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGD4536 Rev. C1FGD4536 360 V PDP Trench IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV Collector to Emitter Breakdown Voltage V = 0V, I = 250 A 360 - - V CES GE C BV Temperature Coefficient of Breakdown CES o V = 0V, I = 250 A - 0.4 - V/ C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0 V - - 100 A CES CE CES GE I G-E Leakage Current V = V , V = 0 V - - 400 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 250 A, V = V 2.4 3.3 4.0 V GE(th) C CE GE I = 20 A, V = 15 V - 1.19 - V C GE I = 30 A, V = 15 V C GE - 1.33 - V V Collector to Emitter CE(sat) Saturation Voltage I = 50 A, V = 15 V, C GE - 1.59 1.8 V o T = 25 C C I = 50 A, V = 15 V, C GE - 1.66 - V o T = 125 C C Dynamic Characteristics C Input Capacitance - 1295 - pF ies V = 30 V V = 0 V, CE , GE C Output Capacitance - 56 - pF oes f = 1 MHz C Reverse Transfer Capacitance - 43 - pF res Switching Characteristics t Turn-On Delay Time - 5 - ns d(on) V = 200 V, I = 20 A, CC C t Rise Time - 20 - ns r R = 5 , V = 15 V, G GE o t Turn-Off Delay Time - 41 - ns d(off) Resistive Load, T = 25 C C t Fall Time - 182 - ns f t Turn-On Delay Time - 5 - ns d(on) V = 200 V, I = 20 A, CC C t Rise Time - 21 - ns r R = 5 , V = 15 V, G GE o t Turn-Off Delay Time - 43 - ns d(off) Resistive Load, T = 125 C C t Fall Time - 249 - ns f Q Total Gate Charge - 47 - nC g V = 200 V I = 20 A, CE , C Q Gate to Emitter Charge - 5.4 - nC ge V = 15 V GE Q Gate to Collector Charge - 15 - nC gc 2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGD4536 Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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