FGD4536 360 V PDP Trench IGBT
September 2013
FGD4536
360 V PDP Trench IGBT
Features General Description
High Current Capability Using novel trench IGBT technology, Fairchilds new series of
trench IGBTs offer the optimum performance for consumer
Low Saturation Voltage: V = 1.59 V @ I = 50 A
CE(sat) C
appliances and PDP TV applications where low conduction and
High Input Impedance
switching losses are essential.
Fast Switching
RoHS Compliant
Applications
PDP TV, Consumer Appliances
C
G
TO-252/D-PAK
E
Absolute Maximum Ratings
Symbol Description Ratings Unit
V Collector to Emitter Voltage 360 V
CES
V Gate to Emitter Voltage 30 V
GES
o
Pulsed Collector Current @ T = 25 C 220 A
I C
C pulse(1)*
o
Maximum Power Dissipation @ T = 25 C 125 W
C
P
D
o
Maximum Power Dissipation @ T = 100 C 50 W
C
o
T Operating Junction Temperature -55 to +150 C
J
o
T Storage Temperature Range -55 to +150 C
stg
Maximum Lead Temp. for soldering
o
T
300 C
L
Purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
R (IGBT) Thermal Resistance, Junction to Case - 1.0 C/W
JC
o
R Thermal Resistance, Junction to Ambient - 62.5 C/W
JA
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1 sec
* Ic_pluse limited by max Tj
2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGD4536 Rev. C1FGD4536 360 V PDP Trench IGBT
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm -
FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm -
Electrical Characteristics of the IGBT T = 25C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV Collector to Emitter Breakdown Voltage V = 0V, I = 250 A 360 - - V
CES GE C
BV Temperature Coefficient of Breakdown
CES
o
V = 0V, I = 250 A
- 0.4 - V/ C
GE C
T Voltage
J
I Collector Cut-Off Current V = V , V = 0 V - - 100 A
CES CE CES GE
I G-E Leakage Current V = V , V = 0 V - - 400 nA
GES GE GES CE
On Characteristics
V G-E Threshold Voltage I = 250 A, V = V 2.4 3.3 4.0 V
GE(th) C CE GE
I = 20 A, V = 15 V - 1.19 - V
C GE
I = 30 A, V = 15 V
C GE - 1.33 - V
V Collector to Emitter
CE(sat)
Saturation Voltage I = 50 A, V = 15 V,
C GE
- 1.59 1.8 V
o
T = 25 C
C
I = 50 A, V = 15 V,
C GE
- 1.66 - V
o
T = 125 C
C
Dynamic Characteristics
C Input Capacitance - 1295 - pF
ies
V = 30 V V = 0 V,
CE , GE
C Output Capacitance - 56 - pF
oes
f = 1 MHz
C Reverse Transfer Capacitance - 43 - pF
res
Switching Characteristics
t Turn-On Delay Time - 5 - ns
d(on)
V = 200 V, I = 20 A,
CC C
t Rise Time - 20 - ns
r
R = 5 , V = 15 V,
G GE
o
t Turn-Off Delay Time - 41 - ns
d(off) Resistive Load, T = 25 C
C
t Fall Time - 182 - ns
f
t Turn-On Delay Time - 5 - ns
d(on)
V = 200 V, I = 20 A,
CC C
t Rise Time - 21 - ns
r
R = 5 , V = 15 V,
G GE
o
t Turn-Off Delay Time - 43 - ns
d(off) Resistive Load, T = 125 C
C
t Fall Time - 249 - ns
f
Q Total Gate Charge - 47 - nC
g
V = 200 V I = 20 A,
CE , C
Q Gate to Emitter Charge - 5.4 - nC
ge
V = 15 V
GE
Q Gate to Collector Charge - 15 - nC
gc
2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FGD4536 Rev. C1